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Three-dimensional Macropore Arrays in p-type Silicon Fabricated by Electrochemical Etching

Title
Three-dimensional Macropore Arrays in p-type Silicon Fabricated by Electrochemical Etching
Authors
Kim, JH[Kim, Jae Hyun]Kim, KP[Kim, Kang-Pil]Lyu, HK[Lyu, Hong-Kun]Woo, SH[Woo, Sung-Ho]Seo, HS[Seo, Hong-Seok]Lee, JH[Lee, Jung-Ho]
DGIST Authors
Kim, JH[Kim, Jae Hyun]Kim, KP[Kim, Kang-Pil]Lyu, HK[Lyu, Hong-Kun]Woo, SH[Woo, Sung-Ho]
Issue Date
2009-07
Citation
Journal of the Korean Physical Society, 55(1), 5-9
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Electrochemical EtchingMacroporeP-Type Silicon
ISSN
0374-4884
Abstract
Ordered macropores formed in p-type silicon substrates (10 ~ 20 Ω.cm) by using electrochemical anodization in various HF-containing electrolytes was investigated under different operating conditions. The effect of electrolyte composition and etch pits on controlling the formation of macropores on periodically arranged pores is reported. The results revealed that the natures of the constituents of the solution play very important roles in determining pore formation and morphology and that stable ordered macropore growth is not possible without an inverse pyramid notch. By using a Si/SiGe/Si/SiGe/p-type silicon structure, we were able to fabricate ordered pillar structures without an etch pit formation process. A possible role of two sets of Si/SiGe layers in pillar formation is proposed.
URI
http://hdl.handle.net/20.500.11750/2506
DOI
10.3970/cmc.2012.031.147
Publisher
Korean Physical Society
Related Researcher
Files:
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Collection:
Division of IoT∙Robotics Convergence Research1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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