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Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se-2 thin film based solar cells

Title
Analysis of photovoltaic cell parameters of non-vacuum solution processed Cu(In, Ga)Se-2 thin film based solar cells
Authors
Khan, F[Khan, Firoz]Lee, HJ[Lee, Hyun-Jung]Oh, M[Oh, Misol]Kim, JH[Kim, Jae Hyun]
DGIST Authors
Khan, F[Khan, Firoz]; Lee, HJ[Lee, Hyun-Jung]; Oh, M[Oh, Misol]; Kim, JH[Kim, Jae Hyun]
Issue Date
2014-10
Citation
Solar Energy, 108, 189-198
Type
Article
Article Type
Article
Keywords
Concentration (Composition)CopperCorrelationCu(In, Ga)SeCu(In, Ga)Se2 (CIGS)Diode Ideality FactorsDoping ConcentrationElectric ResistanceEnergy EfficiencyFilmGalliumNon-Cacuum ProcessNon-Vacuum ProcessParameterizationPhotoelectrochemical CellsPhotovoltaic Cell ParametersPhotovoltaic CellsPhotovoltaic SystemReverse-Saturation CurrentsSemiconducting Selenium CompoundsSemiconductor DopingSolar Cell PerformanceSolar CellsSolar PowerSpray-PyrolysisSpray-Pyrolysis TechniquesThin-Film Solar CellThin-Film Solar CellsThin-Films
ISSN
0038-092X
Abstract
The losses in Cu(In, Ga)Se2 (CIGS) solar cells due to photovoltaic (PV) cell parameters, namely the shunt resistance Rsh, series resistance Rs, diode ideality factor n, and reverse saturation current density J0, were analyzed in this study. The PV cell parameters of the solar cells were analytically determined for various doping concentrations of Cu and In in CIGS films. The CIGS films were deposited using a low cost non-toxic solvent (deionized) by a non-vacuum process (spray pyrolysis technique). They were subsequently characterized using XRD, FE-SEM, I-V and UV-Vis techniques to correlate the structural, electrical, and optical properties of the films with solar cell performance. Maximum short circuit current density of 0.0218A/cm2 is achieved for Cu/Se and In/Se molar ratios of 0.131 and 0.318, respectively. However, the maximum obtained Voc value is 0.431V for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. The maximum achieved efficiency was ~4.38% for Cu/Se and In/Se molar ratios of 0.105 and 0.191, respectively. Analytically predicted values of Rsh, Rs, n, and J0 were 116.82Ωcm2, 4.64Ωcm2, 1.8016, and 1.4952×10-6A/cm2, respectively. © 2014 Elsevier Ltd.
URI
http://hdl.handle.net/20.500.11750/2642
DOI
10.1016/j.solener.2014.06.038
Publisher
Elsevier Ltd
Related Researcher
Files:
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Collection:
ETC1. Journal Articles
Smart Textile Convergence Research Group1. Journal Articles


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