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Polymerization of defect states at dislocation cores in InAs
- Polymerization of defect states at dislocation cores in InAs
- Park, JS[Park, Ji-Sang]; Kang, J[Kang, Joongoo]; Yang, JH[Yang, Ji-Hui]; McMahon, WE[McMahon, W. E.]; Wei, SH[Wei, Su-Huai]
- DGIST Authors
- Kang, J[Kang, Joongoo]
- Issue Date
- Journal of Applied Physics, 119(4)
- Article Type
- Calculations; Defect Bands; Defect Levels; Defect State; Defects; Dislocation Core; Dispersions; Electronic Structure; Energy Gap; First-Principles Calculation; III-V Semiconductors; Partial Dislocations; Point Defects; Recombination Centers; Repair; Semiconductor Devices; Spatial Proximity
- Dislocations are essentially lines of point defects which can act as recombination centers in semiconductor devices. These point defects do not behave as isolated defects. Their spatial proximity enables them to hybridize into a one-dimensional band, and the distribution of resulting defect-band states is determined by both the position of the band and its dispersion. In the case of glissile 90° partial dislocations in III-V semiconductors, the dislocation core can adopt a variety of different reconstructions. Each of these reconstructions has a different arrangement of point defects, which affects the hybridization into defect bands and their associated dispersion. Here, we illustrate these principles by performing first-principles calculations for InAs and find that some defect levels for InAs dislocations lie outside of the band gap where they cannot act as recombination centers. To provide some insight into the electronic structure of dislocations in ternary alloys, some examples relevant to InGaAs and GaAsP are included. © 2016 AIP Publishing LLC.
- American Institute of Physics Publishing
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- Emerging Materials ScienceETC1. Journal Articles
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