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Perpendicular magnetic anisotropy properties of tetragonal Mn3Ga films under various deposition conditions

Title
Perpendicular magnetic anisotropy properties of tetragonal Mn3Ga films under various deposition conditions
Authors
Bang, HW[Bang, Hyun-Woo]Yoo, W[Yoo, Woosuk]Choi, Y[Choi, Youngha]You, CY[You, Chun-Yeol]Hong, JI[Hong, Jung-Il]Dolinsek, J[Dolinsek, Janez]Jung, MH[Jung, Myung-Hwa]
DGIST Authors
Hong, JI[Hong, Jung-Il]
Issue Date
2016-01
Citation
Current Applied Physics, 16(1), 63-67
Type
Article
Article Type
Article
Keywords
AnisotropyDepositionDeposition ConditionsDeposition TemperaturesFerrimagnetic FilmsFilm GrowthGalliumHigh Spin PolarizationHysteresisMagnetic AnisotropyMagnetic HysteresisMagnetic MaterialsMagnetic PropertiesMagnetismMagnetizationMagnetron Sputtering MethodManganesePerpendicular Magnetic AnisotropySaturation MagnetizationScanning Electron MicroscopySpin PolarizationSpin Transfer TorqueThin-FilmsX-Ray Diffraction DataX Ray Diffraction
ISSN
1567-1739
Abstract
The tetragonal Mn3Ga films exhibited high perpendicular magnetic anisotropy, low saturation magnetization, and high spin polarization, which satisfy the criteria of spin-transfer-torque based devices. For practical device applications, it is necessary to improve the interface nature and optimize the deposition conditions. We fabricated thin films of tetragonal Mn3Ga directly on MgO(100) without any buffer layer by using DC/RF magnetron sputtering method. We investigated the crystallinity, microstructure, and magnetic properties with varying the deposition conditions; such as deposition temperature (350-450 °C), RF power (25-40 W), and Ar gas pressure (2-7 mTorr). X-ray diffraction data revealed that the growth direction is perpendicular to the film plane, i.e., the c axis. Scanning electron microscope images showed that the top surface is flat with a maximum thickness of 290 nm. The optimal deposition conditions are 400 °C, 35 W, and 5 mTorr in our sputtering system. For the field perpendicular to the film plane, clear hysteresis loop was observed with the saturation magnetization MS = 100 emu/cc at room temperature. By extrapolating the hard magnetization data for the field parallel to the film plane, the anisotropic energy was estimated about K1 = 1 × 106 J/m3. © 2015 Published by Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/2749
DOI
10.1016/j.cap.2015.10.012
Publisher
Elsevier B.V.
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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