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Hydrogenation-induced atomic stripes on the 2H-MoS2 surface

Title
Hydrogenation-induced atomic stripes on the 2H-MoS2 surface
Authors
Han, SW[Han, Sang Wook]Yun, WS[Yun, Won Seok]Lee, JD[Lee, J. D.]Hwang, YH[Hwang, Y. H.]Baik, J[Baik, J.]Shin, HJ[Shin, H. J.]Lee, WG[Lee, Wang G.]Park, YS[Park, Young S.]Kim, KS[Kim, Kwang S.]
DGIST Authors
Yun, WS[Yun, Won Seok]; Lee, JD[Lee, J. D.]
Issue Date
2015-12-22
Citation
Physical Review B: Condensed Matter and Materials Physics, 92(24)
Type
Article
Article Type
Article
ISSN
1098-0121
Abstract
We report that the hydrogenation of a single crystal 2H-MoS2 induces a novel-intermediate phase between 2H and 1T phases on its surface, i.e., the large-area, uniform, robust, and surface array of atomic stripes through the intralayer atomic-plane gliding. The total energy calculations confirm that the hydrogenation-induced atomic stripes are energetically most stable on the MoS2 surface between the semiconducting 2H and metallic 1T phase. Furthermore, the electronic states associated with the hydrogen ions, which is bonded to sulfur anions on both sides of the MoS2 surface layer, appear in the vicinity of the Fermi level (EF) and reduces the band gap. This is promising in developing the monolayer-based field-effect transistor or vanishing the Schottky barrier for practical applications. ©2015 American Physical Society.
URI
http://hdl.handle.net/20.500.11750/2795
DOI
10.1103/PhysRevB.92.241303
Publisher
American Physical Society
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles


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