Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Joonwoo | - |
dc.contributor.author | Jeong, Soon Moon | - |
dc.contributor.author | Jeong, Jaewook | - |
dc.date.available | 2017-07-11T05:44:06Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2822 | - |
dc.description.abstract | We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 μm. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the fieldeffect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters. © 2015 The Japan Society of Applied Physics. | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment | - |
dc.type | Article | - |
dc.identifier.doi | 10.7567/JJAP.54.114102 | - |
dc.identifier.scopusid | 2-s2.0-84946075094 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.54, no.11 | - |
dc.subject.keywordPlus | Amorphous-Indium Gallium Zinc Oxides | - |
dc.subject.keywordPlus | Amorphous Films | - |
dc.subject.keywordPlus | Amorphous Indiumgallium-Zinc Oxide (A-IGZO) Thin-Film Transistor (TFTs) | - |
dc.subject.keywordPlus | Amorphous Semiconductors | - |
dc.subject.keywordPlus | Ar Plasma Treatment | - |
dc.subject.keywordPlus | Differential Gain | - |
dc.subject.keywordPlus | Electric Inverters | - |
dc.subject.keywordPlus | Field-Effect Mobilities | - |
dc.subject.keywordPlus | Gallium | - |
dc.subject.keywordPlus | Indium | - |
dc.subject.keywordPlus | Interfacial State | - |
dc.subject.keywordPlus | Plasma Applications | - |
dc.subject.keywordPlus | Plasma Theory | - |
dc.subject.keywordPlus | Positive Shift | - |
dc.subject.keywordPlus | Semiconducting Indium Compounds | - |
dc.subject.keywordPlus | SemICONDUCTORS | - |
dc.subject.keywordPlus | Short Channels | - |
dc.subject.keywordPlus | Thin Film Transistors | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Threshold Voltage | - |
dc.subject.keywordPlus | Zinc | - |
dc.subject.keywordPlus | Zinc Oxide | - |
dc.citation.number | 11 | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 54 | - |
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