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Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode
- Physical characterization of amorphous In-Ga-Zn-O thin-film transistors with direct-contact asymmetric graphene electrode
- Jeong, J[Jeong, Jaewook]; Kim, J[Kim, Joonwoo]; Noh, HY[Noh, Hee-Yeon]; Jeong, SM[Jeong, Soon Moon]; Kim, JH[Kim, Jung-Hye]; Myung, S[Myung, Sung]
- DGIST Authors
- Jeong, J[Jeong, Jaewook]; Kim, J[Kim, Joonwoo]; Noh, HY[Noh, Hee-Yeon]; Jeong, SM[Jeong, Soon Moon]; Kim, JH[Kim, Jung-Hye]
- Issue Date
- AIP Advances, 4(9)
- Article Type
- Amorphous Films; Asymmetric Electrodes; Contact Properties; Electro-Chemical Electrodes; Electrodes; Graphene; Graphene Electrodes; Graphene Transistors; Graphite Electrodes; Parasitic Resistances; Physical Characterization; Schottky Barrier Diodes; Schottky Barriers; Schottky Characteristics; Semiconducting Indium Compounds; Thin-Film Transistor (TFT); Thin-Film Transistors (TFTs); Thin-Films; Thin Film Circuits
- High performance a-IGZO thin-film transistors (TFTs) are fabricated using an asymmetric graphene drain electrode structure. A-IGZO TFTs (channel length = 3 μm) were successfully demonstrated with a saturation field-effect mobility of 6.6 cm2/Vs without additional processes between the graphene and a-IGZO layer. The graphene/a-IGZO junction exhibits Schottky characteristics and the contact property is affected not only by the Schottky barrier but also by the parasitic resistance from the depletion region under the graphene electrode. Therefore, to utilize the graphene layer as S/D electrodes for a-IGZO TFTs, an asymmetric electrode is essential, which can be easily applied to the conventional pixel electrode structure. © 2014 Author(s).
- American Institute of Physics Publishing
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