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Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition

Title
Electrical and optical properties of Ti doped ZnO films grown on glass substrate by atomic layer deposition
Authors
Wan, Z[Wan, Zhixin]Kwack, WS[Kwack, Won-Sub]Lee, WJ[Lee, Woo-Jae]Jang, SI[Jang, Seung-II]Kim, HR[Kim, Hye-Ri]Kim, JW[Kim, Jin-Woong]Jung, KW[Jung, Kang-Won]Min, WJ[Min, Won-Ja]Yu, KS[Yu, Kyu-Sang]Park, SH[Park, Sung-Hun]Yun, EY[Yun, Eun-Young]Kim, JH[Kim, Jin-Hyock]Kwon, SH[Kwon, Se-Hun]
DGIST Authors
Jung, KW[Jung, Kang-Won]
Issue Date
2014-09
Citation
Materials Research Bulletin, 57, 23-28
Type
Article
Article Type
Article
Keywords
A. Thin FilmsAtomic LayerAtomic Layer DepositionB. Vapor DepositionC. Ionic ConductivityCrystallinitiesD. Electrical PropertiesDepositionDeposition TemperaturesElectric PropertiesElectrical and Optical PropertiesGlass SubstratesMetallic FilmsMinimum ValueSubstratesTi-Doped ZnO FilmsTitanium DopedTransmission Electron MicroscopyX Ray DiffractionZinc Oxide
ISSN
0025-5408
Abstract
Titanium doped zinc oxide (Ti doped ZnO) films were prepared by atomic layer deposition methods at a deposition temperature of 200 °C. The Ti content in Ti doped ZnO films was varied from 5.08 at.% to 15.02 at.%. X-ray diffraction results indicated that the crystallinity of the Ti doped ZnO films had degraded with increasing Ti content. Transmission electron microscopy was used to investigate the microstructural evolution of the Ti doped ZnO films, showing that both the grain size and crystallinity reduced with increasing Ti content. The electrical resistivity of the Ti doped ZnO films showed a minimum value of 1.6 × 10-3 Ω cm with the Ti content of 6.20 at.%. Furthermore, the Ti doped ZnO films exhibited excellent transmittance. © 2014 Elsevier Ltd.
URI
http://hdl.handle.net/20.500.11750/3049
DOI
10.1016/j.materresbull.2014.04.070
Publisher
Elsevier Ltd
Files:
There are no files associated with this item.
Collection:
New BiologyNanoBio Imaging Laboratory1. Journal Articles


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