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Effects of Addition of Ta and Y Ions to InZnO Thin Film Transistors by Sol-Gel Process
- Effects of Addition of Ta and Y Ions to InZnO Thin Film Transistors by Sol-Gel Process
- Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Park, SN[Park, Si-Nae]; Sung, SJ[Sung, Shi-Joon]; Kang, JK[Kang, Jin-Kyu]
- DGIST Authors
- Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Park, SN[Park, Si-Nae]; Kang, JK[Kang, Jin-Kyu]
- Issue Date
- Journal of Nanoscience and Nanotechnology, 13(6), 4211-4215
- Article Type
- Current Ratios; Electrical Characteristic; Field Effect Transistors; High-K Material; High-K Materials; Ions; Metal Oxide Thin-Film Transistor; Metal Oxide Thin-Film Transistors; Oxygen; Sol-Gel Process; Sub-Threshold Swing; TaInZnO; Thin-Film Transistor (TFT); Thin-Film Transistors (TFTs); Thin-Films; YInZnO
- We have investigated the effects of the addition of tantalum (Ta) and yttrium (Y) ions to InZnO thin film transistors (TFTs) using the sol-gel process. TaInZnO and YInZnO TFTs had significantly lower off current and higher on-to-off current ratio than InZnO TFTs. Ta and Y ions have strong affinity to oxygen and so suppress the formation of free electron carriers in thin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The optimized TaInZnO and YInZnO TFTs showed high on/off ratio and low subthreshold swing. Copyright © 2013 American Scientific Publishers All rights reserved.
- American Scientific Publishers
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- Division of Nano∙Energy Convergence Research1. Journal Articles
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