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Effects of Addition of Ta and Y Ions to InZnO Thin Film Transistors by Sol-Gel Process

Title
Effects of Addition of Ta and Y Ions to InZnO Thin Film Transistors by Sol-Gel Process
Authors
Son, DH[Son, Dae-Ho]Kim, DH[Kim, Dae-Hwan]Kim, JH[Kim, Jung-Hye]Park, SN[Park, Si-Nae]Sung, SJ[Sung, Shi-Joon]Kang, JK[Kang, Jin-Kyu]
DGIST Authors
Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Park, SN[Park, Si-Nae]; Kang, JK[Kang, Jin-Kyu]
Issue Date
2013-06
Citation
Journal of Nanoscience and Nanotechnology, 13(6), 4211-4215
Type
Article
Article Type
Article
Keywords
Current RatiosElectrical CharacteristicField Effect TransistorsHigh-K MaterialHigh-K MaterialsIonsMetal Oxide Thin-Film TransistorMetal Oxide Thin-Film TransistorsOxygenSol-Gel ProcessSub-Threshold SwingTaInZnOThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Thin-FilmsYInZnO
ISSN
1533-4880
Abstract
We have investigated the effects of the addition of tantalum (Ta) and yttrium (Y) ions to InZnO thin film transistors (TFTs) using the sol-gel process. TaInZnO and YInZnO TFTs had significantly lower off current and higher on-to-off current ratio than InZnO TFTs. Ta and Y ions have strong affinity to oxygen and so suppress the formation of free electron carriers in thin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The optimized TaInZnO and YInZnO TFTs showed high on/off ratio and low subthreshold swing. Copyright © 2013 American Scientific Publishers All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3233
DOI
10.1166/jnn.2013.7026
Publisher
American Scientific Publishers
Related Researcher
Files:
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Collection:
Division of Nano∙Energy Convergence Research1. Journal Articles


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