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Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In-Ga-Zn-O Thin-Film Transistors

Title
Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In-Ga-Zn-O Thin-Film Transistors
Authors
Jeong, J[Jeong, Jaewook]Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Kim, J[Kim, Junghye]Choi, B[Choi, Byeongdae]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Lee, GJ[Lee, Gwang Jun]; Kim, J[Kim, Joonwoo]; Kim, J[Kim, Junghye]; Choi, B[Choi, Byeongdae]
Issue Date
2013-03
Citation
Applied Physics Express, 6(3)
Type
Article
Article Type
Article
Keywords
Ambient OxygenAmorphousingazno (A-IGZO)Channel LayersDominant MechanismGalliumOxygenOxygen AnnealingStabilityStretched ExponentialThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Threshold Voltage ShiftsZinc
ISSN
1882-0778
Abstract
We studied the bias stress instability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) by varying the active layer thickness (t) from 6 to 100 nm. We found that the stretched exponential relationship between the threshold voltage shift and the stress time can be explained by oxygen dispersive diffusion which is absorbed near the back channel region during an oxygen annealing process in the active layer. For an a- IGZO TFT with t = 6 nm, direct exposure of the channel layer to the ambient oxygen greatly increases the bias stress instability and induces hump like characteristics, indicating that the creation of acceptor-like states is the dominant mechanism of the instability of a-IGZO TFTs with a thin active layer. © 2013 The Japan Society of Applied Physics.
URI
http://hdl.handle.net/20.500.11750/3252
DOI
10.7567/APEX.6.031101
Publisher
Japan Society of Applied Physics
Related Researcher
Files:
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Collection:
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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