Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, Jaewook | - |
| dc.contributor.author | Lee, Gwang Jun | - |
| dc.contributor.author | Kim, Joonwoo | - |
| dc.contributor.author | Kim, Jung-Hye | - |
| dc.contributor.author | Choi, Byeongdae | - |
| dc.date.available | 2017-07-11T06:38:00Z | - |
| dc.date.created | 2017-04-10 | - |
| dc.date.issued | 2013-02 | - |
| dc.identifier.issn | 0268-1242 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.11750/3265 | - |
| dc.description.abstract | We demonstrate high operating voltage transparent thin-film transistors (HVTTFTs) using amorphous InGaZnO (a-IGZO) active layers by introducing a high resistance bulk region in the source/drain electrodes. The HVTTFTs are operated at above VDS = 100 V with a high on/off current ratio and a good subthreshold slope. The electrical characteristics of the HVTTFTs were dominantly affected by Schottky contact resistance for small off-set length, and bulk resistance for large off-set length, indicating that optimization of the off-set length is a key factor to realize high performance HVTTFTs. © 2013 IOP Publishing Ltd. | - |
| dc.publisher | Institute of Physics Publishing | - |
| dc.title | High operating voltage application of transparent a-InGaZnO thin-film transistors | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1088/0268-1242/28/2/025015 | - |
| dc.identifier.scopusid | 2-s2.0-84872978899 | - |
| dc.identifier.bibliographicCitation | Semiconductor Science and Technology, v.28, no.2 | - |
| dc.citation.number | 2 | - |
| dc.citation.title | Semiconductor Science and Technology | - |
| dc.citation.volume | 28 | - |
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- Division of Nanotechnology 1. Journal Articles
- Division of Electronics & Information System 1. Journal Articles
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