Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Chung, JW[Chung, Jin-Won] | ko |
dc.contributor.author | Park, JW[Park, Jun Woong] | ko |
dc.contributor.author | Lee, YJ[Lee, Yu Jin] | ko |
dc.contributor.author | Ahn, SW[Ahn, Seh-Won] | ko |
dc.contributor.author | Lee, HM[Lee, Heon-Min] | ko |
dc.contributor.author | Park, OO[Park, O. Ok] | ko |
dc.date.available | 2017-07-11T06:52:52Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, v.51, no.10 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3327 | - |
dc.description.abstract | Hydrogenated amorphous silicon-germanium (a-SiGe:H) solar cells are fabricated with different thicknesses of the i/n graded layer and profiling shapes for appropriate band gap profiling. Comparison of the solar parameters between the U-shape profiling and the exponential shape (E-shape) profiling has been carried out at the same total thickness. In the U-shape profiling, as the thickness of the i/n graded layer increase, the fill factor (FF) and open circuit voltage (V oc) of p-i-n single-junction a-SiGe:H solar cells increase, but the short circuit current (J sc) of cells decreases. In the E-shape profiling, the J sc of the a-SiGe:H cell is enhanced without significant losses in V oc. For further analysis, a modified E-shape profiling is incorporated in a-Si:H/a-SiGe:H double-junction cells, which has resulted in the improvement of V oc and FF of doublejunction cells to 1.67 V and 0.753, respectively, without significant reduction in J sc,SiGe QE, 12.58 mA/cm 2. © 2012 The Japan Society of Applied Physics. | - |
dc.publisher | Institute of Physics Publishing | - |
dc.subject | A-Si:H | - |
dc.subject | Amorphous Silicon | - |
dc.subject | Fill-Factor | - |
dc.subject | Graded Layers | - |
dc.subject | Hydrogenation | - |
dc.subject | Open Circuit Voltage | - |
dc.subject | Silicon Alloys | - |
dc.subject | Silicon Germanium | - |
dc.subject | Solar Cells | - |
dc.subject | Solar Parameters | - |
dc.title | Graded Layer Modification for High Efficiency Hydrogenated Amorphous Silicon-Germanium Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1143/JJAP.51.10NB16 | - |
dc.identifier.wosid | 000310707800034 | - |
dc.identifier.scopusid | 2-s2.0-84869130080 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Chung, JW[Chung, Jin-Won] | - |
dc.contributor.nonIdAuthor | Park, JW[Park, Jun Woong] | - |
dc.contributor.nonIdAuthor | Lee, YJ[Lee, Yu Jin] | - |
dc.contributor.nonIdAuthor | Ahn, SW[Ahn, Seh-Won] | - |
dc.contributor.nonIdAuthor | Lee, HM[Lee, Heon-Min] | - |
dc.identifier.citationVolume | 51 | - |
dc.identifier.citationNumber | 10 | - |
dc.identifier.citationTitle | Japanese Journal of Applied Physics | - |
dc.type.journalArticle | Article | - |
dc.contributor.affiliatedAuthor | Park, OO[Park, O. Ok] | - |
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