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Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors

Title
Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors
Authors
Kim, JH[Kim, Jung-Hye]Son, DH[Son, Dae-Ho]Park, SN[Park, Si-Nea]Kim, DH[Kim, Dae-Hwan]Sung, SJ[Sung, Shi-Joon]Jung, EA[Jung, Eun-Ae]Ha, K[Ha, KiRyong]Kang, JK[Kang, Jin-Kyu]
DGIST Authors
Kim, JH[Kim, Jung-Hye]; Son, DH[Son, Dae-Ho]; Park, SN[Park, Si-Nea]; Kim, DH[Kim, Dae-Hwan]; Jung, EA[Jung, Eun-Ae]; Kang, JK[Kang, Jin-Kyu]
Issue Date
2012-09
Citation
Current Applied Physics, 12, E24-E28
Type
Article
Article Type
Article; Proceedings Paper
Keywords
Active Channel LayersField-Effect MobilitiesMetal OxideMetal OxidesMetallic Compoundsoff CurrentON/OFF Current RatioSol-GelSol-Gel ProcessSol-GelsThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Thin-FilmsTi AdditionTiInOTiInZnOTitaniumTitanium Oxides
ISSN
1567-1739
Abstract
In this study, we have newly developed titanium-indium oxide (TiInO) and titanium-indium zinc oxide (TiInZnO) thin films as the active channel layer in thin film transistors (TFTs) by the sol-gel process. The effects of adding Ti on TiInO and TiInZnO TFTs were investigated. The addition of Ti elements can suppress formation of oxygen vacancies because of the stronger oxidation tendency of Ti relative to that of Zn or In. TiInO and TiInZnO TFTs showed lower off currents and higher on/off current ratios than pure InO and InZnO TFTs. A TiInO TFT doped with 10.31 mol% Ti showed good performance with an on/off current ratio greater than 10 7, and a field-effect mobility of 1.91 cm 2 V -1 S -1. A TiInZnO TFT doped with 2.92 mol % Ti showed an on/off current ratio greater than 10 6, and a field-effect mobility of 0.45 cm 2 V -1 S -1. © 2012 Elsevier Inc. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3339
DOI
10.1016/j.cap.2011.07.043
Publisher
Elsevier B.V.
Related Researcher
Files:
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Collection:
ETC1. Journal Articles


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