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Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Title
Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
Authors
Jeon, KR[Jeon, Kun-Rok]Min, BC[Min, Byoung-Chul]Park, YH[Park, Youn-Ho]Jo, YH[Jo, Young-Hun]Park, SY[Park, Seung-Young]Park, CY[Park, Chang-Yup]Shin, SC[Shin, Sung-Chul]
DGIST Authors
Shin, SC[Shin, Sung-Chul]
Issue Date
2012-07-09
Citation
Applied Physics Letters, 101(2)
Type
Article
Article Type
Article
Keywords
Bias DependenceDepolarizationFerromagnetic ElectrodesFerromagnetic MaterialsFerromagnetismFerromagnetsHanle EffectsInterfacial RoughnessInterfacial SpinsLocal FieldsLocal Magnetic FieldModel CalculationsSpin-Relaxation RatesSpin PrecessionSpin RelaxationSuperconducting Films
ISSN
0003-6951
Abstract
Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently. © 2012 American Institute of Physics.
URI
http://hdl.handle.net/20.500.11750/3355
DOI
10.1063/1.4733478
Publisher
American Institute of Physics Publishing
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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