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Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
- Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
- Jeon, KR[Jeon, Kun-Rok]; Min, BC[Min, Byoung-Chul]; Park, YH[Park, Youn-Ho]; Jo, YH[Jo, Young-Hun]; Park, SY[Park, Seung-Young]; Park, CY[Park, Chang-Yup]; Shin, SC[Shin, Sung-Chul]
- DGIST Authors
- Shin, SC[Shin, Sung-Chul]
- Issue Date
- Applied Physics Letters, 101(2)
- Article Type
- Bias Dependence; Depolarization; Ferromagnetic Electrodes; Ferromagnetic Materials; Ferromagnetism; Ferromagnets; Hanle Effects; Interfacial Roughness; Interfacial Spins; Local Fields; Local Magnetic Field; Model Calculations; Spin-Relaxation Rates; Spin Precession; Spin Relaxation; Superconducting Films
- Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently. © 2012 American Institute of Physics.
- American Institute of Physics Publishing
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