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Characteristics of Al-Doped ZnO Films Grown by Atomic Layer Deposition for Silicon Nanowire Photovoltaic Device

Title
Characteristics of Al-Doped ZnO Films Grown by Atomic Layer Deposition for Silicon Nanowire Photovoltaic Device
Authors
Oh, BY[Oh, Byeong-Yun]Han, JW[Han, Jin-Woo]Seo, DS[Seo, Dae-Shik]Kim, KY[Kim, Kwang-Young]Baek, SH[Baek, Seong-Ho]Jang, HS[Jang, Hwan Soo]Kim, JH[Kim, Jae Hyun]
DGIST Authors
Baek, SH[Baek, Seong-Ho]; Jang, HS[Jang, Hwan Soo]; Kim, JH[Kim, Jae Hyun]
Issue Date
2012-07
Citation
Journal of Nanoscience and Nanotechnology, 12(7), 5330-5335
Type
Article
Article Type
Article
Keywords
3-DimensionalAl-ConcentrationAl-Doped Zinc OxideAl-Doped ZnOAluminumAtomic Layer DepositionBand Gap EnergyConformal DepositionDiffraction PeaksElectric ConductivityElectrical ResistivityElectronic DeviceII-VI SemiconductorLayer-by-Layer GrowthMerit ValuesNanowiresOptical CharacteristicsPhotovoltaic DevicesSilicon Nanowire Photovoltaic DeviceSilicon NanowiresSputtering MethodsSurface Chemical ReactionsSurface PassivationTransparent ElectrodeZinc OxideZinc Oxide II-VI SemiconductorsZnO
ISSN
1533-4880
Abstract
We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al film with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation © 2012 American Scientific Publishers.
URI
http://hdl.handle.net/20.500.11750/3358
DOI
10.1166/jnn.2012.6255
Publisher
American Scientific Publishers
Related Researcher
Files:
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Collection:
Center for Core Research Facilities1. Journal Articles


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