Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Park, CY[Park, Chang-Yup] | ko |
dc.contributor.author | You, CY[You, Chun-Yeol] | ko |
dc.contributor.author | Jeon, KR[Jeon, Kun-Rok] | ko |
dc.contributor.author | Shin, SC[Shin, Sung-Chul] | ko |
dc.date.available | 2017-07-11T06:55:15Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2012-05-28 | - |
dc.identifier.citation | Applied Physics Letters, v.100, no.22 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3365 | - |
dc.description.abstract | We investigated the correlation between the ferromagnetism and electric resistivity of Mo-doped (3-10 at.) In 2O 3 films. We find that the saturation magnetization increases with the Mo concentration until it reaches its maximum at 7 at. Mo doping (7.1 emu/cm 3), after which it rapidly decreases upon higher doping concentration. Interestingly, the resistivity reveals opposite behavior with the Mo concentration, showing a minimum value at 7 at. Mo doping. According to the temperature-dependent resistivity and the Hall effect measurements, we find that the samples with higher magnetization show metallic behavior with higher electron concentration. Notably, the samples show a linear relationship between the carrier concentration and the degree of magnetization. We believe the ferromagnetism in Mo-doped In 2O 3 is ascribed to the indirect exchange interaction mediated by the charge carriers. © 2012 American Institute of Physics. | - |
dc.publisher | American Institute of Physics Publishing | - |
dc.subject | Doping Concentration | - |
dc.subject | Electric Conductivity | - |
dc.subject | Electron Concentration | - |
dc.subject | Ferromagnetism | - |
dc.subject | Hall Effect Measurement | - |
dc.subject | Indirect Exchange Interactions | - |
dc.subject | Linear Relationships | - |
dc.subject | Metallic Behaviors | - |
dc.subject | Minimum Value | - |
dc.subject | Mo Concentration | - |
dc.subject | Saturation Magnetization | - |
dc.subject | Semiconductor Doping | - |
dc.subject | Temperature-Dependent Resistivity | - |
dc.title | Charge-carrier mediated ferromagnetism in Mo-doped In2O3 films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4722928 | - |
dc.identifier.wosid | 000304823800029 | - |
dc.identifier.scopusid | 2-s2.0-84862146433 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Park, CY[Park, Chang-Yup] | - |
dc.contributor.nonIdAuthor | You, CY[You, Chun-Yeol] | - |
dc.contributor.nonIdAuthor | Jeon, KR[Jeon, Kun-Rok] | - |
dc.identifier.citationVolume | 100 | - |
dc.identifier.citationNumber | 22 | - |
dc.identifier.citationTitle | Applied Physics Letters | - |
dc.type.journalArticle | Article | - |
dc.contributor.affiliatedAuthor | Shin, SC[Shin, Sung-Chul] | - |
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