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Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

Title
Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes
Authors
Jeong, J[Jeong, Jaewook]Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Choi, B[Choi, Byeongdae]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Lee, GJ[Lee, Gwang Jun]; Kim, J[Kim, Joonwoo]; Choi, B[Choi, Byeongdae]
Issue Date
2012-03-12
Citation
Applied Physics Letters, 100(11)
Type
Article
Article Type
Article
Keywords
Current TransferElectrical CharacterizationElectrodesHigh-Performance CircuitsInverter CircuitParasitic ResistancesSource/Drain ElectrodesThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Transfer Characteristics
ISSN
0003-6951
Abstract
We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic resistance was as low as 10 cm with small current transfer length. Based on the transfer characteristics, we found that V DS dependent Cu migration creates donor-like deep and tail states in the sub-bandgap region. The feasibility of Cu S/D electrodes for a-IGZO TFTs using inverter circuits indicates that fabrication of high performance circuits is possible by controlling the Cu electro-migration. © 2012 American Institute of Physics.
URI
http://hdl.handle.net/20.500.11750/3383
DOI
10.1063/1.3694273
Publisher
American Institute of Physics Publishing
Files:
There are no files associated with this item.
Collection:
ETC1. Journal Articles
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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