DGIST Scholar: Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

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Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

Title: Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

Author(s): Jeong, J[Jeong, Jaewook] ; Lee, GJ[Lee, Gwang Jun] ; Kim, J[Kim, Joonwoo] ; Choi, B[Choi, Byeongdae]

DGIST Authors: Jeong, J[Jeong, Jaewook] ; Lee, GJ[Lee, Gwang Jun] ; Kim, J[Kim, Joonwoo] ; Choi, B[Choi, Byeongdae]

Subject: Current Transfer ; Electrical Characterization ; Electrodes ; High-Performance Circuits ; Inverter Circuit ; Parasitic Resistances ; Source/Drain Electrodes ; Thin-Film Transistor (TFT) ; Thin-Film Transistors (TFTs) ; Transfer Characteristics

Abstract: We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic resistance was as low as 10 cm with small current transfer length. Based on the transfer characteristics, we found that V DS dependent Cu migration creates donor-like deep and tail states in the sub-bandgap region. The feasibility of Cu S/D electrodes for a-IGZO TFTs using inverter circuits indicates that fabrication of high performance circuits is possible by controlling the Cu electro-migration. © 2012 American Institute of Physics.