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Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor

Title
Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor
Authors
Kim, DH[Kim, Dae-Hwan]Son, DH[Son, Dae-Ho]Sung, SJ[Sung, Shi-Joon]Kim, JH[Kim, Jung-Hye]Kang, JK[Kang, Jin-Kyu]
DGIST Authors
Kim, DH[Kim, Dae-Hwan]; Son, DH[Son, Dae-Ho]; Kim, JH[Kim, Jung-Hye]; Kang, JK[Kang, Jin-Kyu]
Issue Date
2012
Citation
Molecular Crystals and Liquid Crystals, 564, 130-137
Type
Article
Article Type
Article
Keywords
AM-OLEDBias StabilityChannel LayersDoping ConcentrationElectric Field EffectsElectrical CharacteristicField-Effect MobilitiesInzrznoMetal OxideMetal OxidesMetallic Compoundsoff CurrentON/OFF RatioPerformance PropertiesSemiconducting Organic CompoundsSol-GelSol-Gel ProcessSol-GelsSolution-ProcessedSolution ProcessSub-Threshold SwingThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)ZirconiumZr Addition
ISSN
1542-1406
Abstract
In this study, solution-processed InZrZnO thin films and a newly developed thin-film transistors (TFTs) were fabricated and characterized electrically. The InZrZnO TFTs were investigated according to the variation of the Zr-metal doping concentration. It was found that the off currents of InZrZnO TFTs were greatly influenced by the composition of Zr atoms suppressing formation of oxygen vacancies. The optimal transistor of InZrZnO channel layer shows good performance properties. The electrical characteristics of a 2.92mol% Zr-doped InZnO TFT shows a field effect mobility of 0.05cm 2 V 1 s 1, a threshold voltage of 6.1V, an on/off ratio of 1.4 10 7, and a subthreshold swing of 0.42V/dec. The InZrZnO TFT also shows better bias stability than undoped InZnO TFT, suggesting Zr plays a key role in regards to stability of TFT. © 2012 Taylor & Francis Group, LLC.
URI
http://hdl.handle.net/20.500.11750/3417
DOI
10.1080/15421406.2012.691705
Publisher
Taylor and Francis Ltd.
Related Researcher
Files:
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Collection:
Division of Nano∙Energy Convergence Research1. Journal Articles


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