Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Choi, Ho-Jin | - |
dc.contributor.author | Baek, Seongho | - |
dc.contributor.author | Jang, Hwan Soo | - |
dc.contributor.author | Kim, Seong Been | - |
dc.contributor.author | Oh, Byeong-Yun | - |
dc.contributor.author | Kim, Jae Hyun | - |
dc.date.available | 2017-07-11T07:05:45Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2011-01 | - |
dc.identifier.citation | Current Applied Physics, v.11, no.1, pp.S25 - S29 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3468 | - |
dc.description.abstract | The metal-assisted chemical etching (MCE) has attracted great attention because of the advantages such as simple and large area process, low-cost and compatible with existing semiconductor technology. We have achieved optimization conditions about two kinds of MCE method for fabrication of p-type silicon wire arrays. First one is one-step MCE that used AgNO3 and BOE solution and second is two-step MCE in which silicon etching proceeds by BOE and H 2O2 solution after depositing Au by thermal evaporation. Particularly, the effect of etching parameters, such as etching time and AgNO3 concentration in one-step MCE and metal catalyst thickness and etching solution temperature in two-step MCE on fabrication of silicon was investigated a morphology, length and etch rate of silicon wire. Finally, we have found important factors for fabrication of uniform and well aligned p-type silicon wire by MCE. © 2010 Published by Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Elsevier B.V. | - |
dc.title | Optimization of metal-assisted chemical etching process in fabrication of p-type silicon wire arrays | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.cap.2010.11.047 | - |
dc.identifier.wosid | 000288784400007 | - |
dc.identifier.scopusid | 2-s2.0-79953197517 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.citation.publicationname | Current Applied Physics | - |
dc.contributor.nonIdAuthor | Choi, Ho-Jin | - |
dc.contributor.nonIdAuthor | Jang, Hwan Soo | - |
dc.contributor.nonIdAuthor | Kim, Seong Been | - |
dc.contributor.nonIdAuthor | Oh, Byeong-Yun | - |
dc.identifier.citationVolume | 11 | - |
dc.identifier.citationNumber | 1 | - |
dc.identifier.citationStartPage | S25 | - |
dc.identifier.citationEndPage | S29 | - |
dc.identifier.citationTitle | Current Applied Physics | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Silicon wire | - |
dc.subject.keywordAuthor | MCE | - |
dc.subject.keywordAuthor | AgNO3eBOE solution | - |
dc.subject.keywordAuthor | BOEeH2O2 solution | - |
dc.subject.keywordPlus | POROUS SILICON | - |
dc.subject.keywordPlus | SI NANOWIRES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | DIAMETER | - |
dc.contributor.affiliatedAuthor | Choi, Ho-Jin | - |
dc.contributor.affiliatedAuthor | Baek, Seongho | - |
dc.contributor.affiliatedAuthor | Jang, Hwan Soo | - |
dc.contributor.affiliatedAuthor | Kim, Seong Been | - |
dc.contributor.affiliatedAuthor | Oh, Byeong-Yun | - |
dc.contributor.affiliatedAuthor | Kim, Jae Hyun | - |
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