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Effect of sputtering condition on the surface properties of silicon oxide thin films prepared for liquid crystal alignment layers

Title
Effect of sputtering condition on the surface properties of silicon oxide thin films prepared for liquid crystal alignment layers
Authors
Sung, SJ[Sung, Shi-Joon]Jung, EA[Jung, Eun Ae]Kim, DH[Kim, Dae-Hwan]Kang, JK[Kang, Jin-Kyu]Yang, KJ[Yang, Kee-Jeong]Do, YS[Do, Yun Seon]Choi, BD[Choi, Byeong-Dae]
DGIST Authors
Jung, EA[Jung, Eun Ae]; Kim, DH[Kim, Dae-Hwan]Kang, JK[Kang, Jin-Kyu]Yang, KJ[Yang, Kee-Jeong]; Do, YS[Do, Yun Seon]; Choi, BD[Choi, Byeong-Dae]
Issue Date
2010-04
Citation
Displays, 31(2), 93-98
Type
Article
Article Type
Article
Keywords
AlignmentAzimuthal Anchoring EnergyChemical CompositionsChemical PropertiesCrystalsInterfacial EnergyLC AlignmentLCoSLiquid Crystal AlignmentLiquid CrystalsMoleculesMorphologyOxide FilmsOxygenOxygen AtomPhotochemical StabilityPhysical and Chemical PropertiesPre-Tilt AngleRF-Magnetron SputteringRF-PowerSemiconducting Silicon CompoundsSilicon OxideSilicon Oxide Thin FilmsSilicon OxidesSputteringSputtering ConditionsSurface ChemistrySurface CompositionSurface CompositionsSurface EnergiesSurface MorphologySurface PropertiesSurface TensionThin-FilmsVapor DepositionWorking Pressures
ISSN
0141-9382
Abstract
SiOx thin films are widely used for the LC alignment layer for LCoS devices due to the thermal and photochemical stability of SiOx. In this work, the relationship between the sputtering condition and the LC alignment properties of SiOx thin films was studied. The physical and chemical properties of SiOx thin films were closely related with the RF power and the working pressure of RF-magnetron sputtering. The surface energy of SiOx thin films was mainly connected with the chemical composition of the SiOx thin films and the behavior of LC molecules on the SiOx thin films was dominantly affected by the surface energy. The azimuthal anchoring energy and the pretilt angle of LC molecules were changed by modifying the amount of oxygen atom in the SiOx thin films. By controlling the sputtering condition of SiOx thin films, it was possible to control the orientation of LC molecules on the SiOx thin films. © 2010 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/20.500.11750/3530
DOI
10.1016/j.displa.2010.02.005
Publisher
Elsevier B.V.
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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