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Low Voltage, High Performance Thin Film Transistor with HfInZnO Channel and HfO2 Gate Dielectric

Title
Low Voltage, High Performance Thin Film Transistor with HfInZnO Channel and HfO2 Gate Dielectric
Authors
Son, DH[Son, Dae-Ho]Kim, DH[Kim, Dae-Hwan]Kim, JH[Kim, Jung-Hye]Sung, SJ[Sung, Shi-Joon]Jung, EA[Jung, Eun-Ae]Kang, JK[Kang, Jin-Kyu]
DGIST Authors
Son, DH[Son, Dae-Ho]; Kim, DH[Kim, Dae-Hwan]; Kim, JH[Kim, Jung-Hye]; Jung, EA[Jung, Eun-Ae]; Kang, JK[Kang, Jin-Kyu]
Issue Date
2010
Citation
Electrochemical and Solid State Letters, 13(8), H274-H277
Type
Article
Article Type
Article
Keywords
Active Channel LayersCo-SputteringElectrical CharacteristicField-Effect MobilitiesGate DielectricsGates (Transistor)HafniumHafnium CompoundsLow Voltagesoff CurrentON/OFF RatioOxygenOxygen VacanciesRadio-Frequency PowerSub-Threshold SwingThin-Film Transistors (TFTs)Thin-FilmsVapor Deposition
ISSN
1099-0062
Abstract
We fabricated thin film transistors (TFTs) using HfInZnO thin films as active channel layers. The thin films of HfInZnO were deposited by co-sputtering from HfO2 and InZnO targets. The HfInZnO TFTs were investigated according to the radio-frequency power applied to the HfO2 target. The transistor on and off currents were greatly influenced by the composition of Hf atoms suppressing the formation of oxygen vacancies. The electrical characteristics of the TFTs show a field-effect mobility of 3.53 cm2 V-1 s-1, a threshold voltage of 1.28 V, an on/off ratio of 1.4× 10-7, and a subthreshold swing of 95 mV/dec. © 2010 The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3535
DOI
10.1149/1.3428510
Publisher
Electrochemical Society
Related Researcher
Files:
There are no files associated with this item.
Collection:
Division of Nano∙Energy Convergence Research1. Journal Articles
ETC1. Journal Articles


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