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Properties of Cu(In,Ga)Se-2 Thin Film Solar Cells on Ga Temperature Variation
- Properties of Cu(In,Ga)Se-2 Thin Film Solar Cells on Ga Temperature Variation
- Park, SY[Park, Soon-Yong]; Lee, EW[Lee, Eun-Woo]; Lee, SH[Lee, Sang-Hwan]; Lee, SH[Lee, Sung Ho]; Huh, KS[Huh, Kwang Soo]; Kang, JK[Kang, J. K.]; Kim, DH[Kim, D. -H.]; Lee, DH[Lee, D. H.]; Jeon, CW[Jeon, Chan-Wook]
- DGIST Authors
- Kang, JK[Kang, J. K.]; Kim, DH[Kim, D. -H.]; Lee, DH[Lee, D. H.]
- Issue Date
- Molecular Crystals and Liquid Crystals, 532, 424-430
- Article Type
- Cell Temperature; CIGS Films; Co-Evaporation; Co-Evaporations; Composition Ranges; Composition Ratio; Copper; Cu-Poor; Cu(In, Ga)Se; Cu(In, Ga)Se2; Diffraction Intensity; Display Devices; Evaporation; Fill-Factor; Gallium; Grain Size; Growth Behavior; Open Circuit Voltage; Peak Ratios; Photovoltaic Performance; Semiconducting Selenium Compounds; Solar Cell; Solar Cells; Solar Power Generation; Temperature Variation; Thin-Film Solar Cells; Thin-Films; Thin Film; Three-Stage Process; Vapor Deposition; Void Density
- In this paper the effect the Ga/(In+Ga) ratio, which was controlled by Ga cell temperature, on the growth behavior of Cu(In,Ga)Se2 (CIGS) thin film and its photovoltaic performance is presented. It was found that both the grain size and the void density of CIGS layer decreased due to higher incorporation of Ga in CIGS by increasing Ga temperature. It was revealed that the CIGS films satisfying the composition ratio of Ga/(In+Ga)=0.3∼0.4 and Cu/(In+Ga)=0.84∼1.04, which were obtained at the Ga temperature of 1033∼1035°C, has the comparable diffraction intensity of (112) and (220) peaks. The (112)/(220) peak ratio of either Cu-rich or heavily Cu-poor CIGS films was found to deviate from unity and the solar cells made at these composition range showed lower photovoltaic performances. The highest efficiency of solar cell obtained by adjusting Ga cell temperature was 8.93% on device area of 0.16cm2 (fill factor, open circuit voltage, and short circuit current were 50.34%, 576mV and 30.79mA/cm2, respectively). Copyright © Taylor & Francis Group, LLC.
- Taylor and Francis Ltd.
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