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Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2

Title
Low Temperature Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and O-2
Authors
Eom, TK[Eom, Tae-Kwang]Sari, W[Sari, Windu]Choi, KJ[Choi, Kyu-Jeong]Shin, WC[Shin, Woong-Chul]Kim, JH[Kim, Jae Hyun]Lee, DJ[Lee, Do-Joong]Kim, KB[Kim, Ki-Bum]Sohn, H[Sohn, Hyunchul]Kim, SH[Kim, Soo-Hyun]
DGIST Authors
Kim, JH[Kim, Jae Hyun]
Issue Date
2009
Citation
Electrochemical and Solid State Letters, 12(11), D85-D88
Type
Article
Article Type
Article
Keywords
Aspect RatioAtomic Layer DepositionContact HolesCyclohexadienesCyclopentadienylsDepositionHigh Aspect RatioLow TemperaturesMethylbenzenesOlefinsOrganometallicsRu FilmRu Thin FilmsRutheniumSilicon CompoundsStep CoverageThin-FilmsTitanium NitrideTolueneTransmission ElectronTransmission Electron Microscopy
ISSN
1099-0062
Abstract
Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1). © 2009 The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3555
DOI
10.1149/1.3207867
Publisher
Electrochemical Society
Related Researcher
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Collection:
Smart Textile Convergence Research Group1. Journal Articles


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