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The role of porous graphite plate for high quality SiC crystal growth by PVT method

Title
The role of porous graphite plate for high quality SiC crystal growth by PVT method
Authors
Shin, Hee WonLee, Hee JunKim, Hwang JuLee, Dong HoonPark, Mi SeonJang, Yeon SukLee, Won JaeYeo, Im GyuChun, Myong ChuelLee, Si HyunKim, Jung Gon
DGIST Authors
Kim, Jung Gon
Issue Date
2016
Citation
16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 858, 113-116
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
0255-5476
Abstract
The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in PG inserted crucible showed the lower intensity of Al, B and Ti impurity concentration than SiC crystal grown in conventional crucible. The PG plate before and after the growth process has been investigated by a Raman spectroscopy and a photoluminescence spectrum (PL). According to the analysis result, it was confirmed that the porous graphite plate had the effect of suppressing impurities supplied to SiC single crystal during the growth process. © 2016 Trans Tech Publications, Switzerland.
URI
http://hdl.handle.net/20.500.11750/3619
DOI
10.4028/www.scientific.net/MSF.858.113
Publisher
Trans Tech Publications Ltd
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceNanoscale Optoelectronic Materials Laboratory2. Conference Papers


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