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Effects of the defect creation on the bidirectional shift of threshold voltage with hump characteristics of InGaZnO TFTs under bias and thermal stress

Title
Effects of the defect creation on the bidirectional shift of threshold voltage with hump characteristics of InGaZnO TFTs under bias and thermal stress
Authors
Im, HwarimSong, HyunsooJeong, JaewookHong, YewonHong, Yongtae
DGIST Authors
Jeong, Jaewook
Issue Date
2014
Citation
21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014, 153-156
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
Abstract
We have investigated the hump characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Under positive gate bias stress, the threshold voltage (Vth) of a-IGZO TFTs showed bidirectional shift with hump; the positive shift in above Vth region and negative shift in subthreshold region. The amount of bidirectional shift depended on the temperature or drain voltage of stress condition. It was concluded that the origins of the bidirectional shift with hump were the shallow donor-like states and deep-level states creation in the semiconductor bulk or at the semiconductor/dielectric interface. Two-dimensional device simulation was also performed to further investigate this phenomenon. © 2014 JSAP.
URI
http://hdl.handle.net/20.500.11750/3771
DOI
10.1109/AM-FPD.2014.6867155
Publisher
IEEE Computer Society
Files:
There are no files associated with this item.
Collection:
ETC2. Conference Papers


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