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Role of high-k material for co-sputtered metal oxide thin film transistors

Title
Role of high-k material for co-sputtered metal oxide thin film transistors
Authors
Son, Dae-HoKim, Jung-HyeSung, Shi-JoonJung, Eun-AeKang, Jin-KyuKim, Dae-Hwan
DGIST Authors
Son, Dae-Ho; Sung, Shi-Joon; Jung, Eun-Ae; Kang, Jin-KyuKim, Dae-Hwan
Issue Date
2010
Citation
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, 474-475
Type
Conference
Article Type
Conference Paper
ISBN
9781617827020
ISSN
1738-7558
Abstract
We have fabricated thin film transistors (TFTs) using HfInZnO and TaInZnO thin film as active channel layers. The active channel layers were deposited by co-sputtering system. It was found that the on/off ratio of transistors was greatly influenced by the composition of high-k material suppressing formation of oxygen vacancies. The performance of fabricated transistors improved clearly with high-k material amount.
URI
http://hdl.handle.net/20.500.11750/3952
Publisher
Korean Information Display Society
Related Researcher
Files:
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Collection:
ETC2. Conference Papers


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