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The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors

Title
The addition effects of Zr and Ta in sol-gel derived InZrZnO and InTaZnO thin film transistors
Authors
Kim, Jung-HyeSon, Dae-HoSung, Shi-JoonJung, Eun-AeKang, Jin-KyuHa, Ki RyongKim, Dae-Hwan
DGIST Authors
Kim, Jung-Hye; Son, Dae-Ho; Sung, Shi-Joon; Jung, Eun-Ae; Kang, Jin-KyuKim, Dae-Hwan
Issue Date
2010
Citation
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, 476-477
Type
Conference
Article Type
Conference Paper
ISBN
9781617827020
ISSN
1738-7558
Abstract
The effects of Zr and Ta contents on characteristics of InZnO films by a sol-gel method and their thin film transistor(TFTs) have been investigated. In particular, the effect of composition variation was studied by using solutions having various metal cation ratios to optimize transistor performance.
URI
http://hdl.handle.net/20.500.11750/3961
Publisher
Society for Information Display
Related Researcher
Files:
There are no files associated with this item.
Collection:
ETC2. Conference Papers


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