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Macropore formation in prepatterned p-type silicon

Title
Macropore formation in prepatterned p-type silicon
Authors
Kim, JaKim, K. PhilSeo, Hong-SeokLyu, Hong-KeunWoo, Sung-HoLee, Jung Ho
DGIST Authors
Kim, JaKim, K. PhilLyu, Hong-KeunWoo, Sung-Ho
Issue Date
2008
Citation
Porous Semiconductors: A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann - 214th ECS Meeting, 16(3), 291-297
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
ISSN
1938-5862
Abstract
The formation of ordered macropores in a prepatterned p-type silicon wafer by electrochemical anodization in HF:H2O:DMSO (dimethyl sulfoxide) and HF:DMSO solutions was investigated. The pore wall thickness in the solutions was found to be reduced with increasing current density. The pore growth rate was compared using two kinds of etch pit; one is for 2 μm lattice spacing, the other is for 5 μm. The growth rate of the macropores for 2 μm size revealed a saturation behavior, while that of 5 μm corresponded to a linear increase in the same range of current density. The big difference in morphologies of macropores between HF:H2O:DMSO and HF:DMSO solutions was accounted for based on the chemical nature of DMSO © The Electrochemical Society.
URI
http://hdl.handle.net/20.500.11750/3993
DOI
10.1149/1.2982568
Publisher
Electrochemical Society
Related Researcher
Files:
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Collection:
Division of IoT∙Robotics Convergence Research2. Conference Papers
Intelligent Devices and Systems Research Group2. Conference Papers


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