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Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate
- Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate
- Jeon, Jeong Heum; Kim, Howon; Jang, Won-Jun; Seo, Jungpil; Kahng, Se-Jong
- DGIST Authors
- Seo, Jungpil
- Issue Date
- Nanotechnology, 28(21)
- Article Type
- Angle Resolved Photoemission Spectroscopy; Bi2Se3; Bi2Te3; Bismuth Selenide; Bismuth Selenide; Cone; Dirac Material; Dispersions; Electric Insulators; Electron Emission; Electron Interference Patterns; Electronic Properties; Electronic States; Epitaxial Growth; Interface; Interfaces (Materials); Interfacial Effects; Interference Patterns; Majorana Fermions; Metals; Molecular Beam Epitaxy; Molecular Beam Epitaxy; Molecular Beams; Photoelectron Spectroscopy; Quantum Chemistry; Quantum Electronics; Quantum Theory; Scanning; Scanning Tunneling Microscopy; Scanning Tunneling Microscopy; Scanning Tunneling Spectroscopy; Semiconducting Selenium Compounds; States; Substrates; Superconductor; Surface; Thin Topological Insulator; Time Reversal Symmetries; Topological Insulators; Transport; Tunneling Microscopy
- The surface states protected by time-reversal symmetry in 3-dimensional topological insulators have recently been confirmed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy, quantum transport and so on. However, the electronic properties of ultra-thin topological insulator films have not been extensively studied, especially when the films are grown on metal substrates. In this paper, we have elucidated the local behaviors of the electronic states of ultra-thin topological insulator Bi2Se3 grown with molecular beam epitaxy on Au(111) using scanning tunneling microscopy/spectroscopy. We have observed linear dispersion of electron interference patterns at higher energies than the Fermi energy that were not accessible by conventional angle-resolved photoemission spectroscopy. Moreover, the dispersion of the interference patterns varies with the film thickness, which is explained by band bending near the interface between the topological insulator and the metal substrate. Our experiments demonstrate that interfacial effects in thin topological insulator films on metal substrate can be sensed using scanning tunneling spectroscopy. © 2017 IOP Publishing Ltd.
- Institute of Physics Publishing
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- Emerging Materials ScienceETC1. Journal Articles
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