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Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate

Title
Thickness-dependent Dirac dispersions of few-layer topological insulators supported by metal substrate
Authors
Jeon, Jeong HeumKim, HowonJang, Won-JunSeo, JungpilKahng, Se-Jong
DGIST Authors
Seo, Jungpil
Issue Date
2017-05-26
Citation
Nanotechnology, 28(21)
Type
Article
Article Type
Article
Keywords
Angle Resolved Photoemission SpectroscopyBi2Se3Bi2Te3Bismuth SelenideBismuth SelenideConeDirac MaterialDispersionsElectric InsulatorsElectron EmissionElectron Interference PatternsElectronic PropertiesElectronic StatesEpitaxial GrowthInterfaceInterfaces (Materials)Interfacial EffectsInterference PatternsMajorana FermionsMetalsMolecular Beam EpitaxyMolecular Beam EpitaxyMolecular BeamsPhotoelectron SpectroscopyQuantum ChemistryQuantum ElectronicsQuantum TheoryScanningScanning Tunneling MicroscopyScanning Tunneling MicroscopyScanning Tunneling SpectroscopySemiconducting Selenium CompoundsStatesSubstratesSuperconductorSurfaceThin Topological InsulatorTime Reversal SymmetriesTopological InsulatorsTransportTunneling Microscopy
ISSN
0957-4484
Abstract
The surface states protected by time-reversal symmetry in 3-dimensional topological insulators have recently been confirmed by angle-resolved photoemission spectroscopy, scanning tunneling microscopy, quantum transport and so on. However, the electronic properties of ultra-thin topological insulator films have not been extensively studied, especially when the films are grown on metal substrates. In this paper, we have elucidated the local behaviors of the electronic states of ultra-thin topological insulator Bi2Se3 grown with molecular beam epitaxy on Au(111) using scanning tunneling microscopy/spectroscopy. We have observed linear dispersion of electron interference patterns at higher energies than the Fermi energy that were not accessible by conventional angle-resolved photoemission spectroscopy. Moreover, the dispersion of the interference patterns varies with the film thickness, which is explained by band bending near the interface between the topological insulator and the metal substrate. Our experiments demonstrate that interfacial effects in thin topological insulator films on metal substrate can be sensed using scanning tunneling spectroscopy. © 2017 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/4169
DOI
10.1088/1361-6528/aa6b52
Publisher
Institute of Physics Publishing
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceETC1. Journal Articles


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