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Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure

Title
Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
Authors
Hyun, Cheol-MinChoi, Jeong-HunLee, Myoung-JaeAhn, Ji-Hoon
DGIST Authors
Lee, Myoung-Jae
Issue Date
2017
Citation
Applied Physics Letters, 111(1)
Type
Article
Article Type
Article
Keywords
Electric FieldsExternal Electric FieldLayered SemiconductorsLayered StructuresMetal Semiconductor InterfaceNanocrystals (NCs)Orthorhombic SymmetryPhoto ThermoelectricPhotocurrentsPhotoexcited ElectronsPhotovoltaic EffectsSemiconductor LasersThermo Electric EquipmentThermo ElectricityTwo Dimensional MaterialsVapor Transport Methods
ISSN
0003-6951
Abstract
The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 ��V/K, which is 3.5 times larger than that of its bulk counterpart. ? 2017 Author(s).
URI
http://hdl.handle.net/20.500.11750/4270
DOI
10.1063/1.4992115
Publisher
American Institute of Physics Inc.
Related Researcher
Files:
There are no files associated with this item.
Collection:
Intelligent Devices and Systems Research Group1. Journal Articles


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