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Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure

Title
Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure
Author(s)
Hyun, Cheol-MinChoi, Jeong-HunLee, Myoung-JaeAhn, Ji-Hoon
Issued Date
2017-07
Citation
Applied Physics Letters, v.111, no.1, pp.013104
Type
Article
Keywords
PERFORMANCEBULKENHANCEMENTFIGUREMERIT
ISSN
0003-6951
Abstract
The photo-thermoelectric properties of SnS nanocrystals, two-dimensional materials with an orthorhombic symmetry, were investigated using a focused laser scanning method. The SnS nanocrystals were synthesized by a vapor transport method, and their fundamental material and electrical properties were investigated. Upon shining a laser onto the SnS channel region under a positive source-drain bias, a positive photocurrent was observed due to photo-excited electron-hole pairs. On the other hand, when this external electric field was not applied, a strong photocurrent was observed within the metal electrode region rather than at the metal-semiconductor interface, which indicated that the major mechanism for the photocurrent under zero external bias was a photo-induced thermoelectric effect rather than a photovoltaic effect. Moreover, the Seebeck coefficient of the SnS nanocrystal device was approximately 1735 V/K, which is 3.5 times larger than that of its bulk counterpart. ? 2017 Author(s).
URI
http://hdl.handle.net/20.500.11750/4270
DOI
10.1063/1.4992115
Publisher
American Institute of Physics Inc.
Related Researcher
  • 이명재 Lee, Myoung-Jae
  • Research Interests Next generation semiconductor material/device; 차세대 반도체 소재/소자; Memristor; 멤리스터; Neuromorphic device; 뉴로모픽 소자; Nonvolatile resistance memory; 비휘발성 저항변화메모리
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Division of Nanotechnology 1. Journal Articles

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