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Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition
- Growth of single-crystalline cubic structured tin(II) sulfide (SnS) nanowires by chemical vapor deposition
- Mudusu, Devika; Nandanapalli, Koteeswara Reddy; Dugasani, Sreekantha Reddy; Kang, Jang Won; Park, Sung Ha; Tu, Charles W.
- DGIST Authors
- Kang, Jang Won
- Issue Date
- RSC Advances, 7(66), 41452-41459
- Article Type
- Chemical Vapor Deposition Methods; Chemical Vapor Depositions (CVD); Crystal Structure; Crystalline Materials; Cubic Crystal Structures; Deposition; Devices; Electron Microscopy; Energy Conversion; Field Effect Transistors; Field Emission Electron Microscopy; High Resolution Transmission Electron Microscopy; Ion Batteries; Nanobelts; Nanoparticles; Nanorods; Nanowires; One Dimensional Nanostructures; P Type Conductivity; Preferential Growth; Route; Semiconducting Films; Single Crystalline; Solar Cells; Thin Films; Tin; Transmission Electron; Transmission Electron Microscopy; Vapor Deposition
- Single crystalline tin(ii) sulfide (SnS) nanowires are synthesized using a chemical vapor deposition (CVD) method with the support of gold as catalyst. Field emission electron microscopy studies show that SnS nanostructures grown at temperatures between 600 and 700 °C have wire-like morphology. These nanowires have an average diameter between 12 and 15 nm with lengths up to several microns. These NWs consist of uniform and smooth surfaces, and exhibit nearly stoichiometric chemical composition (Sn/S = 1.13). Transmission electron microscopy analysis reveals that the NWs consist of single crystalline cubic crystal structure with a preferential growth direction of 〈100〉. Field-effect transistor devices fabricated with SnS nanowires show that the nanowires consist of p-type conductivity along with carrier density of 6 × 1018 cm-3. © 2017 The Royal Society of Chemistry.
- Royal Society of Chemistry
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- DGIST-LBNL Research Center for Emerging Materials1. Journal Articles
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