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Enhanced quantum confinement in tensile-strained silicon nanocrystals embedded in silicon nitride

Title
Enhanced quantum confinement in tensile-strained silicon nanocrystals embedded in silicon nitride
Authors
Cho, Chang-HeeKang, Jang-WonPark, Il-KyuPark, Seong-Ju
DGIST Authors
Cho, Chang-Hee; Kang, Jang-Won
Issue Date
2017
Citation
Current Applied Physics, 17(12), 1616-1621
Type
Article
Article Type
Article
Keywords
CapacitanceCapacitance SpectroscopyConduction LevelsNanocrystalsNitridesQuantum ConfinementSemiconductor NanocrystalSemiconductor NanocrystalsSiliconSilicon NanocrystalsSilicon NitrideSize DependentStrained SiliconTensile StrainTensile Strained SiliconValence EnergyValence Level
ISSN
1567-1739
Abstract
Here, we report that the tensile strain in silicon nanocrystals embedded in silicon nitride significantly changes the size-dependent evolution of the conduction and valence energy levels, compared with strain-free silicon nanocrystals. Using capacitance spectroscopy, the quantum-confined energy shifts in the conduction and valence levels were identified as ΔEC(eV) = 11.7/d2, and ΔEV(eV) = −4.5/d2, where d is the mean diameter of the silicon nanocrystals in nanometers. These findings indicated that the tensile strain in the silicon nanocrystals significantly increased the quantum confinement, by a factor of 3.3 in the conduction levels, and by a factor of 1.8 in the valence levels. © 2017 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/4564
DOI
10.1016/j.cap.2017.09.005
Publisher
Elsevier B.V.
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceNanoscale Optoelectronic Materials Laboratory1. Journal Articles
DGIST-LBNL Research Center for Emerging Materials1. Journal Articles


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