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Enhanced quantum confinement in tensile-strained silicon nanocrystals embedded in silicon nitride
- Enhanced quantum confinement in tensile-strained silicon nanocrystals embedded in silicon nitride
- Cho, Chang-Hee; Kang, Jang-Won; Park, Il-Kyu; Park, Seong-Ju
- DGIST Authors
- Cho, Chang-Hee; Kang, Jang-Won
- Issue Date
- Current Applied Physics, 17(12), 1616-1621
- Article Type
- Capacitance; Capacitance Spectroscopy; Conduction Levels; Nanocrystals; Nitrides; Quantum Confinement; Semiconductor Nanocrystal; Semiconductor Nanocrystals; Silicon; Silicon Nanocrystals; Silicon Nitride; Size Dependent; Strained Silicon; Tensile Strain; Tensile Strained Silicon; Valence Energy; Valence Level
- Here, we report that the tensile strain in silicon nanocrystals embedded in silicon nitride significantly changes the size-dependent evolution of the conduction and valence energy levels, compared with strain-free silicon nanocrystals. Using capacitance spectroscopy, the quantum-confined energy shifts in the conduction and valence levels were identified as ΔEC(eV) = 11.7/d2, and ΔEV(eV) = −4.5/d2, where d is the mean diameter of the silicon nanocrystals in nanometers. These findings indicated that the tensile strain in the silicon nanocrystals significantly increased the quantum confinement, by a factor of 3.3 in the conduction levels, and by a factor of 1.8 in the valence levels. © 2017 Elsevier B.V.
- Elsevier B.V.
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- Emerging Materials ScienceNanoscale Optoelectronic Materials Laboratory1. Journal Articles
DGIST-LBNL Research Center for Emerging Materials1. Journal Articles
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