Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Ko, Seonkyung | - |
dc.contributor.author | Yong, Taeyeong | - |
dc.contributor.author | Kim, Soo-Kwan | - |
dc.contributor.author | Park, Jin Young | - |
dc.contributor.author | Lee, Gyudong | - |
dc.contributor.author | You, Hyung Ryul | - |
dc.contributor.author | Han, Sanghun | - |
dc.contributor.author | Lee, Duck Hoon | - |
dc.contributor.author | Choi, Seongmin | - |
dc.contributor.author | Choi, Yong Chan | - |
dc.contributor.author | Kim, Younghoon | - |
dc.contributor.author | Lee, Nam-Suk | - |
dc.contributor.author | Song, Seulki | - |
dc.contributor.author | Choi, Jongmin | - |
dc.date.accessioned | 2023-04-12T17:10:18Z | - |
dc.date.available | 2023-04-12T17:10:18Z | - |
dc.date.created | 2023-04-12 | - |
dc.date.issued | 2023-06 | - |
dc.identifier.issn | 2367-198X | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/45824 | - |
dc.description.abstract | The hole transport layer (HTL) plays a key role in inverted perovskite solar cells (PSCs), and nickel oxide has been widely adopted for HTL. However, a conventional solution-processed bottom-up approach for NiOx (S-NiO) HTL fabrication shows several drawbacks, such as poor coverage, irregular film thickness, numerous defect sites, and inefficient hole extraction from the perovskite layer. To address these issues, herein, a novel NiOx HTL top-down synthesis route via electrochemical anodization is developed. The basicity of the electrolyte used in anodization considerably influences electrochemical reactions and results in the structure of the anodized NiOx (A-NiO). The optimized A-NiO provides outstanding optoelectrical properties, including uniform film thickness, enhanced transmittance, deep-lying valance band, low trap density, and better hole extraction ability from the perovskite. Owing to these advantages, the A-NiO-based inverted PSC exhibits an improved power conversion efficiency of 21.9% compared with 19.1% for the S-NiO-based device. In addition, the A-NiO device shows a higher inlet and long-term ambient stability than the S-NiO device due to the superior hole transfer ability of A-NiO, which suppresses charge accumulation between NiOx and the perovskite interface. © 2023 Wiley-VCH GmbH. | - |
dc.language | English | - |
dc.publisher | Wiley | - |
dc.title | A Top-Down Strategy for Reforming the Characteristics of NiO Hole Transport Layer in Inverted Perovskite Solar Cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/solr.202300049 | - |
dc.identifier.wosid | 000961852300001 | - |
dc.identifier.scopusid | 2-s2.0-85151412383 | - |
dc.identifier.bibliographicCitation | Solar RRL, v.7, no.11 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | hole transport layers | - |
dc.subject.keywordAuthor | anodization | - |
dc.subject.keywordAuthor | nanostructures | - |
dc.subject.keywordAuthor | NiO | - |
dc.subject.keywordAuthor | perovskite solar cells | - |
dc.subject.keywordPlus | PLANAR-STRUCTURE | - |
dc.subject.keywordPlus | EFFICIENT | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | LENGTHS | - |
dc.citation.number | 11 | - |
dc.citation.title | Solar RRL | - |
dc.citation.volume | 7 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels; Materials Science | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels; Materials Science, Multidisciplinary | - |
dc.type.docType | Article | - |
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