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Electrical properties of polycrystalline and single crystalline nickel layer capped ZnO nanowires

Title
Electrical properties of polycrystalline and single crystalline nickel layer capped ZnO nanowires
Authors
Mudusu, DevikaNandanapalli, Koteeswara R.Dugasani, Sreekantha R.Kang, Jang-WonPark, Sung-HaTu, Charles W.
DGIST Authors
Kang, Jang-Won
Issue Date
2017-12
Citation
Current Applied Physics, 17(12), 1699-1706
Type
Article
Article Type
Article
Keywords
Chemical Vapor DepositionCore/Shell NanowiresCrystalline MaterialsE Beam EvaporationElectric PropertiesElectrical CharacteristicElectrical PropertiesField Effect TransistorsFunctionalized ZnO NanowiresMOSFET DevicesNanowiresNickelN-Type ConductivityPhoto-AnodesPhotoanodes For PEC DevicesSingle-CrystallineVapor-Liquid-Solid ProcessZinc OxideZnO NanowiresZnO/Ni Core/Shell Nanowires
ISSN
1567-1739
Abstract
This article reports the electrical characteristics of pristine, polycrystalline and single crystalline nickel (Ni) layer capped zinc oxide (ZnO) nanowires. Core/shell ZnO/Ni nanostructures were developed using chemical vapor deposition and e-beam evaporation, and the structures were annealed at different temperatures. Field effect transistor (FET) devices were fabricated using photolithography and investigated their characteristics at room temperature. All FET devices exhibited depletion-mode characteristics with n-type conductivity. However, single-crystalline Ni shelled ZnO nanowires based FET devices showed a high on/off ratio and transconductance, as compared to other devices. The overall measurements show that though the ZnO nanowires capped with Ni layer, their electrical properties remain same as pristine ZnO nanowires. © 2017 Elsevier B.V.
URI
http://hdl.handle.net/20.500.11750/4605
DOI
10.1016/j.cap.2017.09.002
Publisher
Elsevier B.V.
Files:
There are no files associated with this item.
Collection:
DGIST-LBNL Research Center for Emerging Materials1. Journal Articles


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