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Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer

Title
Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
Authors
Kim, YoungjaeYun, Won SeokLee, J. D.
DGIST Authors
Lee, J. D.
Issue Date
2016-09-14
Citation
Scientific Reports, 6
Type
Article
Article Type
Article
ISSN
2045-2322
Abstract
Functionalized X-Bi bilayers (X = Ga, In, and Tl) with halogens bonded on their both sides have been recently claimed to be the giant topological insulators due to the strong band inversion strengths. Employing the first-principles electronic structure calculation, we find the topological band order transition from the order p-p-s of the X-Bi bilayers with halogens on their both sides to the new order p-s-p of the bilayers (especially for X = Ga and In) with halogen on one side and hydrogen on the other side, where the asymmetric hydrogen bonding simulates the substrate. We further find that the p-s bulk band gap of the bilayer bearing the new order p-s-p sensitively depends on the electric field, which enables a meaningful engineering of the quantum spin Hall edge state by controlling the external electric field. © 2016 The Author(s).
URI
http://hdl.handle.net/20.500.11750/5082
DOI
10.1038/srep33395
Publisher
Nature Publishing Group
Related Researcher
  • Author Lee, Jae Dong Light and Matter Theory Laboratory
  • Research Interests Theoretical Condensed Matter Physics; Ultrafast Dynamics and Optics; Nonequilibrium Phenomena
Files:
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Collection:
Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles


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