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Effect of Ta Addition of Co-sputtered Amorphous Tantalum Indium Zinc Oxide Thin Film Transistors with Bias Stability

Title
Effect of Ta Addition of Co-sputtered Amorphous Tantalum Indium Zinc Oxide Thin Film Transistors with Bias Stability
Authors
Son, Dae-HoKim, Dae-HwanPark, Si-NaeSung, Shi-JoonKang, Jin-Kyu
DGIST Authors
Kim, Dae-Hwan; Sung, Shi-Joon; Kang, Jin-Kyu
Issue Date
2014-11
Citation
Journal of Nanoscience and Nanotechnology, 14(11), 8163-8166
Type
Article
Article Type
Article
Keywords
Bias StabilityCo-SputteringIndium Zinc OxidesOxide TFTTa AdditionsTaInZnO
ISSN
1533-4880
Abstract
In this work, we have fabricated thin film transistors (TFTs) using amorphous tantalum indium zinc oxide (a-TaInZnO) channels by the co-sputtering process. The effects of incorporating tantalum on the InZnO material were investigated using Hall-effect measurement results, and electrical characteristics. We also found that the carrier densities of thin films and the transistor on-off currents were greatly influenced by the composition of tantalum addition. Ta ions have strong affinity to oxygen and so suppress the formation of free electron carriers in thin films; they play an important role in enhancing the electrical characteristic due to their high oxygen bonding ability. The electrical characteristics of the optimized TFTs shows a field effect mobility of 3.67 cm2 V-1 s-1 , a threshold voltage of 1.28 V, an on/off ratio of 1-1 × 108 , and a subthreshold swing of 480 mV/dec. Under gate bias stress conditions, the TaInZnO TFTs showed lower shift in threshold voltage shifts. © 2014 American Scientific Publishers All rights reserved.
URI
http://hdl.handle.net/20.500.11750/5240
DOI
10.1166/jnn.2014.9904
Publisher
American Scientific Publishers
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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