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Characteristics of Cu2ZnSnSe4 Film Formed by Using Co-sputtered Precursors and Selenization

Title
Characteristics of Cu2ZnSnSe4 Film Formed by Using Co-sputtered Precursors and Selenization
Authors
Hong, SungwookKim, ChanPark, Sang-ChoelRhee, IlsuKim, Dae-HwanKang, Jin-Kyu
DGIST Authors
Kim, Dae-HwanKang, Jin-Kyu
Issue Date
2012
Citation
Molecular Crystals and Liquid Crystals, 565, 147-152
Type
Article
Article Type
Article
Keywords
AnnealingAnnealing TemperaturesBand Gap EnergyCobaltCopperCZTSeEnergy GapRapid Thermal ProcessRapid Thermal Processing (RTP)SeleniumSelenizationSoda Lime GlassSolar CellSolar CellsTinTungsten Halogen LampVarious SubstratesZ TransformsZinc
ISSN
1542-1406
Abstract
A Cu 2ZnSnSe 4 (CZTSe) film was formed by the selenization of Cu(Zn, Sn) (CZT) alloy precursors. The CZT precursor was prepared by depositing zinc onto a layer of Cu-Sn co-sputtered on molybdenum-coated soda-lime glass. Selenium was evaporated on the CZT precursor. The CZTSe film was then annealed for a minute at various substrate temperatures ranging from 350°C to 650°C in steps of 50°C in a rapid thermal process using tungsten halogen lamps. The lattice parameters of the CZTSe annealed at temperatures over 500°C were found to be a = 5.709 Å and c = 11.351 Å. We also found that the energy gap of the CZTSe was 1.137 eV, which was independent of the annealing temperature. © 2012 Kyungil University.
URI
http://hdl.handle.net/20.500.11750/5377
DOI
10.1080/15421406.2012.693319
Publisher
Taylor and Francis Ltd.
Related Researcher
Files:
There are no files associated with this item.
Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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