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Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process

Title
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
Authors
Park, Mi SunLee, Doo HyoungBae, Eun JinKim, Dae-HwanKang, Jin GyuSon, Dae-HoRyu, Si Ok
DGIST Authors
Kim, Dae-HwanKang, Jin Gyu
Issue Date
2010
Citation
Molecular Crystals and Liquid Crystals, 529, 137-146
Type
Article
Article Type
Article
Keywords
AcetonitrileAmorphous FilmsChemical PropertiesCoatingsConducting OxidesDe-WettingDepositionDeposition ProcessEthyleneEthylene GlycolFabricationField-Effect MobilitiesField Effect TransistorsFilm PreparationIndium Gallium Zinc Oxide (IGZO)Indium Gallium Zinc OxidesLow-Cost SolutionMetal-Oxide-Semiconductor Field-Effect TransistorMetal HalideMetal HalidesMolar RatioMOS-FETMOSFET DevicesOrganic SolventsOxide FilmsPrecursor SolutionsSemiconducting IndiumSolution-Based DepositionSpin-Coating ProcessTFTsThin-Film Transistors (TFTs)Thin-FilmsThin FilmTransparent Amorphous Conducting Oxide SemiconductorTransparent Conducting OxideTurn On VoltageVapor DepositionVisible RegionVolume RatioZincZinc CoatingsZinc OxideZnO Structures
ISSN
1542-1406
Abstract
Highly transparent (90% in the visible region) indium gallium zinc oxide (IGZO) thin films were deposited using a spin coating process with a newly developed precursor solution. Acetonitrile was used as the solvent in the preparation of the metal halide precursor solution for the deposition of the IGZO thin films. Ethylene glycol was added to the solvent at four different volume ratios of acetonitrile to ethylene glycol to complement the chemical properties of acetonitrile in order to avoid the de-wetting phenomenon during the deposition process. The IGZO thin films were prepared at a stoichiometric molar ratio of 2:2:1 on the basis of the theoretical In2O3-Ga2O3-ZnO structure. The IGZO metal-oxide-semiconductor field-effect transistor (MOSFET), with a field-effect mobility (FE) as high as 1.1cm2/V s, a turn on voltage of 15.8V, and a current on-to-off ratio greater than 107, was successfully fabricated in this study. This low cost solution-based deposition process was applicable for the fabrication of transparent conducting oxide (TCO)-based devices. © Taylor & Francis Group, LLC.
URI
http://hdl.handle.net/20.500.11750/5416
DOI
10.1080/15421406.2010.495892
Publisher
Taylor and Francis Ltd.
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy1. Journal Articles


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