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Liquid Crystal Alignment Properties of Inorganic SiO2 Layers Prepared by Reactive Sputtering in Nitrogen-Argon Mixtures

Title
Liquid Crystal Alignment Properties of Inorganic SiO2 Layers Prepared by Reactive Sputtering in Nitrogen-Argon Mixtures
Authors
Sung, Shi JoonJung, Eun AeYang, Kee JeongPark, Young TaeKang, Jin KyuChoi, Byeong-Dae
DGIST Authors
Sung, Shi Joon; Yang, Kee JeongKang, Jin KyuChoi, Byeong-Dae
Issue Date
2009
Citation
Molecular Crystals and Liquid Crystals, 507, 137-149
Type
Article
Article Type
Article; Proceedings Paper
Keywords
AlignmentArgonArgon MixtureCompact DevicesCrystalsDeposition ProcessDisplay DevicesDisplay QualityFabrication ProcessFilm PreparationHigh-ApertureInorganic Liquid CrystalInorganic Thin FilmLC AlignmentLiquid Crystal AlignmentLiquid Crystal on SiliconLiquid CrystalsLiquid Crystals AlignmentMixingMixing RatiosMobile DevicesMobile DisplaysMobile Information DevicesMorphologyPhotochemical StabilityPreparation MethodReactive SputteringRF-PowerSilicon CompoundsSilicon OxidesSiO2Sputtering ConditionsSputtering GasSurface MorphologyThin-Film DevicesThin-FilmsThin Layers
ISSN
1542-1406
Abstract
According to the advent of ubiquitous world, the requirement for the mobile information devices with high display quality and compact device size is surprisingly increased. Among the diverse candidates for this mobile display system for mobile devices, Liquid Crystal on Silicon (LCoS) is the most competitive device due to the high aperture ratio and simple fabrication process. The inorganic liquid crystal (LC) alignment layers are widely used for LCoS devices because of the thermal and photochemical stability. In this work, the reactive sputtering was selected for the preparation method of inorganic LC alignment layers. The nitrogen (N2) gas had the effect on the deposition process of SiO2and the surface morphology of SiO2thin layers were affected by the N2mixing ratio of sputtering gas. In addition, the LC alignment properties on SiO2thin layer were also closely related with the N2mixing ratio and other sputtering conditions. In the case of high RF power of reactive sputtering, the N2mixing ratio has little effect on the LC alignment on SiO2thin layers. However, in the case of low RF power of reactive sputtering, the LC alignment properties were enfeebled by increasing the N2mixing ratio. This result might be attributed to the change of the surface morphology of inorganic SiO2thin layers.
URI
http://hdl.handle.net/20.500.11750/5422
DOI
10.1080/15421400903050475
Publisher
Taylor and Francis Ltd.
Related Researcher
Files:
There are no files associated with this item.
Collection:
Convergence Research Center for Solar Energy1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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