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Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process

Title
Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process
Authors
Kim, Gee YeongSon, Dae-HoNguyen, Trang Thi ThuYoon, SeokhyunKwon, MinsuJeon, Chan-WookKim, Dae-HwanKang, J.-K.Jo, William
DGIST Authors
Kim, Dae-HwanKang, J.-K.
Issue Date
2015
Citation
42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Type
Conference
Article Type
Conference Paper
ISBN
9780000000000
Abstract
CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells. © 2015 IEEE.
URI
http://hdl.handle.net/20.500.11750/5474
DOI
10.1109/PVSC.2015.7356411
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
Files:
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Collection:
Convergence Research Center for Solar Energy2. Conference Papers


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