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Effect of finite tunneling magneto-resistance for the switching dynamics in the spin transfer torque magnetic tunneling junctions

Title
Effect of finite tunneling magneto-resistance for the switching dynamics in the spin transfer torque magnetic tunneling junctions
Authors
You, Chun YeolKim, H.
DGIST Authors
You, Chun Yeol
Issue Date
2017-04-24
Citation
2017 IEEE International Magnetics Conference, INTERMAG 2017
Type
Conference
ISBN
9781538610862
ISSN
0000-0000
Abstract
The details of switching behavior of spin transfer torque magnetic random access memory (STT-MRAM) are important for the scientific understandings as well as the technical reasons. © 2017 IEEE.
URI
http://hdl.handle.net/20.500.11750/5798
DOI
10.1109/INTMAG.2017.8007798
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
  • Author You, Chun Yeol Spin Phenomena for Information Nano-devices(SPIN) Lab
  • Research Interests Spintronics; Condensed Matter Physics; Magnetic Materials & Thin Films; Micromagnetic Simulations; Spin Nano-Devices
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceSpin Phenomena for Information Nano-devices(SPIN) Lab2. Conference Papers


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