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dc.contributor.authorYou, Chun Yeolko
dc.contributor.authorKim, H.ko
dc.date.accessioned2018-02-05T10:17:29Z-
dc.date.available2018-02-05T10:17:29Z-
dc.date.created2018-01-11-
dc.date.issued2017-04-24-
dc.identifier.citation2017 IEEE International Magnetics Conference, INTERMAG 2017-
dc.identifier.isbn9781538610862-
dc.identifier.issn0000-0000-
dc.identifier.urihttp://hdl.handle.net/20.500.11750/5798-
dc.description.abstractThe details of switching behavior of spin transfer torque magnetic random access memory (STT-MRAM) are important for the scientific understandings as well as the technical reasons. © 2017 IEEE.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleEffect of finite tunneling magneto-resistance for the switching dynamics in the spin transfer torque magnetic tunneling junctions-
dc.typeConference-
dc.identifier.doi10.1109/INTMAG.2017.8007798-
dc.type.rimsCONF-
dc.contributor.localauthorYou, Chun Yeol-
dc.contributor.nonIdAuthorKim, H.-
dc.identifier.citationTitle2017 IEEE International Magnetics Conference, INTERMAG 2017-
dc.identifier.conferencecountryIE-
dc.identifier.conferencelocationDublin-


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