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Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices

Title
Characteristics of resistive switching in ZnO/SiOx multi-layers for transparent nonvolatile memory devices
Authors
Kim, K[Kim, Kyongmin]Kim, E[Kim, Eunkyeom]Kim, Y[Kim, Youngill]Sok, JH[Sok, Jung Hyun]Park, K[Park, Kyoungwan]
Issue Date
2016-12
Citation
Journal of the Korean Physical Society, 69(12), 1798-1804
Type
Article
Article Type
Article
Keywords
Multi-LayerNon-Volatile MemoryResistive SwitchingRRAMZnO
ISSN
0374-4884
Abstract
Bipolar resistive switching in ZnO/SiOx bi-layer and ZnO/SiOx/ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiOx films were grown using plasma-enhanced chemical-vapor deposition at 200 °C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was ~10 during ~100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of “micro”-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiOx layer plays an important role in resistive switching. © 2016, The Korean Physical Society.
URI
http://hdl.handle.net/20.500.11750/2149
DOI
10.3938/jkps.69.1798
Publisher
Korean Physical Society
Files:
There are no files associated with this item.
Collection:
ETC1. Journal Articles


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