Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Jaewook | - |
dc.contributor.author | Kim, Joonwoo | - |
dc.contributor.author | Kim, Donghyun | - |
dc.contributor.author | Jeon, Heonsu | - |
dc.contributor.author | Jeong, Soon Moon | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.date.available | 2017-07-05T08:35:40Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2223 | - |
dc.description.abstract | In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer. © 2016 Author(s). | - |
dc.publisher | American Institute of Physics Publishing | - |
dc.title | Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4961379 | - |
dc.identifier.scopusid | 2-s2.0-84982099153 | - |
dc.identifier.bibliographicCitation | AIP Advances, v.6, no.8 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | Amorphous-Indium Gallium Zinc Oxides | - |
dc.subject.keywordPlus | Amorphous Films | - |
dc.subject.keywordPlus | Amorphous Semiconductors | - |
dc.subject.keywordPlus | Back Channels | - |
dc.subject.keywordPlus | Channel Layers | - |
dc.subject.keywordPlus | Effective Channel Length | - |
dc.subject.keywordPlus | Effective Mobilities | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | Field-Effect Mobilities | - |
dc.subject.keywordPlus | Gallium | - |
dc.subject.keywordPlus | Holographic Lithography | - |
dc.subject.keywordPlus | Indium | - |
dc.subject.keywordPlus | Lithography | - |
dc.subject.keywordPlus | Mobility Enhancement | - |
dc.subject.keywordPlus | OXIDE SemICONDUCTORS | - |
dc.subject.keywordPlus | Periodic Structures | - |
dc.subject.keywordPlus | Semiconducting Indium Compounds | - |
dc.subject.keywordPlus | Thin Film Circuits | - |
dc.subject.keywordPlus | Thin Film Transistors | - |
dc.subject.keywordPlus | Thin Films | - |
dc.subject.keywordPlus | Zinc | - |
dc.citation.number | 8 | - |
dc.citation.title | AIP Advances | - |
dc.citation.volume | 6 | - |