Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Jo, Young-Woo | - |
dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Son, Dong-Hyeok | - |
dc.contributor.author | Won, Chul-Ho | - |
dc.contributor.author | Jang, Hwan Soo | - |
dc.contributor.author | Kang, In Man | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.date.available | 2017-07-05T08:37:57Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/2251 | - |
dc.description.abstract | Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (Wfin) of 120 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 200 nm. The proposed device achieved very low drain leakage (Ioff) < 8 × 10-8 A/mm at 7 V and < 1 × 10-6 A/mm at 100 V, which is four orders of improvement over IOFF of conventional Al(In)N/GaN HEMTs. In addition, the device exhibits a high ON-state current (ION) of 1.12 A/mm, a steep sub-threshold swing (S) of 63 mV/decade, a low drain-induced barrier lowering of 18.5 mV/V, and a high power-gain cutoff frequency (fT) of 21 GHz. © 2016 IEEE. | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2016.2575040 | - |
dc.identifier.scopusid | 2-s2.0-84976869638 | - |
dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.37, no.7, pp.855 - 858 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | Al(In)N/GaN | - |
dc.subject.keywordAuthor | high electron mobility transistor (HEMT) | - |
dc.subject.keywordAuthor | leakage current | - |
dc.subject.keywordAuthor | I-V characteristics | - |
dc.subject.keywordAuthor | TMAH solution | - |
dc.subject.keywordAuthor | short channel effects (SCEs) | - |
dc.subject.keywordPlus | Al(In)N/GaN | - |
dc.subject.keywordPlus | ALGAN/GAN HemTS | - |
dc.subject.keywordPlus | Aluminum | - |
dc.subject.keywordPlus | Cutoff Frequency | - |
dc.subject.keywordPlus | DEVICE CHARACTERISTICS | - |
dc.subject.keywordPlus | Drain-Induced Barrier Lowering | - |
dc.subject.keywordPlus | Drain Current | - |
dc.subject.keywordPlus | Electron Mobility | - |
dc.subject.keywordPlus | Field Effect Transistors | - |
dc.subject.keywordPlus | Finfet | - |
dc.subject.keywordPlus | Fins (Heat Exchange) | - |
dc.subject.keywordPlus | High Electron Mobility Transistor (HemT) | - |
dc.subject.keywordPlus | High Electron Mobility Transistors | - |
dc.subject.keywordPlus | I-V Characteristics | - |
dc.subject.keywordPlus | IV Characteristics | - |
dc.subject.keywordPlus | Leakage Current | - |
dc.subject.keywordPlus | Leakage Currents | - |
dc.subject.keywordPlus | LINEARITY | - |
dc.subject.keywordPlus | Low-Leakage Current | - |
dc.subject.keywordPlus | Mos Devices | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | Short-Channel Effect | - |
dc.subject.keywordPlus | Short Channel Effects (SCEs) | - |
dc.subject.keywordPlus | Switching Applications | - |
dc.subject.keywordPlus | TMAH Solution | - |
dc.citation.endPage | 858 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 855 | - |
dc.citation.title | IEEE Electron Device Letters | - |
dc.citation.volume | 37 | - |
There are no files associated with this item.