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Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation

Title
Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation
Authors
Yun, WS[Yun, Won Seok]Lee, JD[Lee, J. D.]
DGIST Authors
Yun, WS[Yun, Won Seok]; Lee, JD[Lee, J. D.]
Issue Date
2015-02-05
Citation
Journal of Physical Chemistry C, 119(5), 2822-2827
Type
Article
Article Type
Article
ISSN
1932-7447
Abstract
We investigate the strain-induced electronic and magnetic properties of single-layer (1L) MoS2 with vacancy defects using the density functional theory calculation. When the tensile strain is applied, 1L-MoS2 with vacancy becomes ferromagnetic and metallic. We elucidate that, from the electronic band structure of vacancy-defect-doped 1L-MoS2, the impurity bands inside the gap play a role of seed to drive novel magnetic and electronic properties as the strain increases. In particular, we also find that 1L-MoS2 with two-sulfur vacancy (V2S) shows the largest magnetic moment at ∼14% strain among various vacancy types and undergoes a spin reorientation transition from out-of-plane to in-plane magnetization at ∼13% strain. This implies that the strain-manipulated 1L-MoS2 with V2S can be a promising candidate for new spintronic applications. © 2015 American Chemical Society.
URI
http://hdl.handle.net/20.500.11750/2351
DOI
10.1021/jp510308a
Publisher
American Chemical Society
Files:
There are no files associated with this item.
Collection:
Emerging Materials ScienceLight and Matter Theory Laboratory1. Journal Articles


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