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A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring
- A Monolithically Integrated Pressure/Oxygen/Temperature Sensing SoC for Multimodality Intracranial Neuromonitoring
- Chan, Wai Pan; Narducci, Margarita; Gao, Yuan; Cheng, Ming-Yuan; Cheong, Jia Hao; George, Arup K.; Cheam, Daw Don; Leong, Siew Chong; Damalerio, Maria Ramona B.; Lim, Ruiqi; Tsai, Ming-Ling; Rahman, Abdur R. A.; Park, Mi Kyoung; Kong, Zhi Hui; Prashanth, Rao Jai; Je, Minkyu
- DGIST Authors
- Je, Minkyu
- Issue Date
- IEEE Journal of Solid: State Circuits, 49(11), 2449-2461
- Article Type
- Article; Proceedings Paper
- Capacitance-to-Voltage Converter (CVC); Capacitance-to-Voltage Converters; Capacitive Pressure Sensor; Capacitive Pressure Sensors; Electrochemical Oxygen; Electrochemical Oxygen Sensor; Intracranial Pressure; Intracranial Pressure (ICP); Temperature Sensor; Temperature Sensors; Traumatic Brain Injuries; Traumatic Brain Injury (TBI)
- A fully integrated SoC for multimodality intracranial neuromonitoring is presented in this paper. Three sensors including a capacitive MEMS pressure sensor, an electrochemical oxygen sensor and a solid-state temperature sensor are integrated together in a single chip with their respective interface circuits. Chopper stabilization and dynamic element matching techniques are applied in sensor interface circuits to reduce circuit noise and offset. On-chip calibration is implemented for each sensor to compensate process variations. Measured sensitivity of the pressure, oxygen, and temperature sensors are 18.6 aF/mmHg, 194 pA/mmHg, and 2 mV/°C, respectively. Implemented in 0.18 μm CMOS, the SoC occupies an area of 1.4 mm × 4 mm and consumes 166 μW DC power. A prototype catheter for intracranial pressure (ICP) monitoring has been implemented and the performance has been verified with ex vivo experiment. © 1966-2012 IEEE.
- Institute of Electrical and Electronics Engineers Inc.
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