Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Choi, Sang-Hyeok | - |
dc.contributor.author | Park, Ji-Yoon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Lim, Byoung-Yong | - |
dc.contributor.author | Kim, Sunjung | - |
dc.date.available | 2017-07-11T06:31:34Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.citation | Thin Solid Films, v.546, pp.2 - 8 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/3181 | - |
dc.description.abstract | Ruthenium (Ru) thin films were grown on thermally-grown SiO2 substrates using atomic layer deposition (ALD) by a sequential supply of (ethylbenzene)(1,3-cyclohexadiene)Ru(0) (EBCHDRu, C14H 18Ru), and molecular oxygen (O2) at deposition temperatures ranging from 140 to 350 °C. A self-limiting film growth was confirmed at the deposition temperature of 225 °C and the growth rate was 0.1 nm/cycle on the SiO2 substrate with a negligible number of incubation cycles (approximately 2 cycles). Plan-view transmission electron microscopy analysis showed that nucleation was started after only 3 ALD cycles and the maximum nuclei density of 1.43 × 1012/cm2 was obtained after 5 ALD cycles. A continuous Ru film with a thickness of ~4 nm was formed after 40 ALD cycles. The film resistivity was decreased with increasing deposition temperature, which was closely related to its crystallinity, microstructure, and density, and the minimum resistivity of ~14 μΩ-cm was obtained at the deposition temperature of 310 °C. The step coverage was approximately 100% at trench (aspect ratio: 4.5) with the top opening size of ~25 nm. Finally, the ALD-Ru film was evaluated in terms of its performance as a seed layer for Cu electroplating. © 2013 Elsevier B.V. | - |
dc.language | English | - |
dc.publisher | Elsevier BV | - |
dc.title | Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2013.03.074 | - |
dc.identifier.wosid | 000325092000002 | - |
dc.identifier.scopusid | 2-s2.0-84885308065 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.citation.publicationname | Thin Solid Films | - |
dc.contributor.nonIdAuthor | Yeo, Seungmin | - |
dc.contributor.nonIdAuthor | Choi, Sang-Hyeok | - |
dc.contributor.nonIdAuthor | Park, Ji-Yoon | - |
dc.contributor.nonIdAuthor | Kim, Soo-Hyun | - |
dc.contributor.nonIdAuthor | Cheon, Taehoon | - |
dc.contributor.nonIdAuthor | Lim, Byoung-Yong | - |
dc.contributor.nonIdAuthor | Kim, Sunjung | - |
dc.identifier.citationVolume | 546 | - |
dc.identifier.citationStartPage | 2 | - |
dc.identifier.citationEndPage | 8 | - |
dc.identifier.citationTitle | Thin Solid Films | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.subject.keywordAuthor | Ruthenium | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Nucleation | - |
dc.subject.keywordAuthor | Seed layer | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.contributor.affiliatedAuthor | Yeo, Seungmin | - |
dc.contributor.affiliatedAuthor | Choi, Sang-Hyeok | - |
dc.contributor.affiliatedAuthor | Park, Ji-Yoon | - |
dc.contributor.affiliatedAuthor | Kim, Soo-Hyun | - |
dc.contributor.affiliatedAuthor | Cheon, Taehoon | - |
dc.contributor.affiliatedAuthor | Lim, Byoung-Yong | - |
dc.contributor.affiliatedAuthor | Kim, Sunjung | - |
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