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Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements

Title
Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements
Authors
Jeong, J[Jeong, Jaewook]Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Jeong, SM[Jeong, Soon Moon]Kim, JH[Kim, Jung-Hye]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Lee, GJ[Lee, Gwang Jun]; Kim, J[Kim, Joonwoo]; Jeong, SM[Jeong, Soon Moon]; Kim, JH[Kim, Jung-Hye]
Issue Date
2013-09-07
Citation
Journal of Applied Physics, 114(9)
Type
Article
Article Type
Article
Keywords
Amorphous Indium-Gallium-Zinc-Oxide (A-IGZO)Amorphous SemiconductorsElectrical CharacteristicField-Effect MobilitiesJunction BarrierParasitic ResistancesProbesTemperature DependentThin-Film Transistor (TFT)Thin-Film Transistors (TFTs)Transfer Characteristics
ISSN
0021-8979
Abstract
We analyzed the temperature-dependent electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method (GFP) with temperatures ranging from 93 to 373 K. The intrinsic field-effect mobility and source/drain parasitic resistance were separately extracted using the GFP method. We found that temperature-dependent transfer characteristics originated from the temperature-dependent intrinsic field-effect mobility of the a-IGZO TFTs. The parasitic resistance was also correlated with the intrinsic-field effect mobility, which decreases as the intrinsic field-effect mobility increases, indicating that access parasitic resistance originated from bulk regions rather than metal/semiconductor junction barrier is a key factor to determine the parasitic resistance of a-IGZO TFTs. © 2013 AIP Publishing LLC.
URI
http://hdl.handle.net/20.500.11750/3205
DOI
10.1063/1.4819886
Publisher
American Institute of Physics Publishing
Related Researcher
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Collection:
Smart Textile Convergence Research Group1. Journal Articles
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles


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