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Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements

Title
Analysis of temperature-dependent electrical characteristics in amorphous In-Ga-Zn-Othin-film transistors using gated-four-probe measurements
Author(s)
Jeong, JaewookLee, Gwang JunKim, JoonwooJeong, Soon MoonKim, Jung-Hye
Issued Date
2013-09-07
Citation
Journal of Applied Physics, v.114, no.9
Type
Article
Keywords
CONTACT RESISTANCEMOBILITYVOLTAGETFT
ISSN
0021-8979
Abstract
We analyzed the temperature-dependent electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method (GFP) with temperatures ranging from 93 to 373 K. The intrinsic field-effect mobility and source/drain parasitic resistance were separately extracted using the GFP method. We found that temperature-dependent transfer characteristics originated from the temperature-dependent intrinsic field-effect mobility of the a-IGZO TFTs. The parasitic resistance was also correlated with the intrinsic-field effect mobility, which decreases as the intrinsic field-effect mobility increases, indicating that access parasitic resistance originated from bulk regions rather than metal/semiconductor junction barrier is a key factor to determine the parasitic resistance of a-IGZO TFTs. © 2013 AIP Publishing LLC.
URI
http://hdl.handle.net/20.500.11750/3205
DOI
10.1063/1.4819886
Publisher
American Institute of Physics Publishing
Related Researcher
  • 정순문 Jeong, Soon Moon
  • Research Interests Mechanoluminescence; 기계발광; Electroluminescence; 전계발광; Display; 디스플레이; Stretchable; 스트레쳐블; Battery-free; 무전원
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Appears in Collections:
Division of Energy & Environmental Technology Soft Optoelectronic Materials Lab. 1. Journal Articles
Division of Nanotechnology 1. Journal Articles

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