High operating voltage application of transparent a-InGaZnO thin-film transistors
- Title
- High operating voltage application of transparent a-InGaZnO thin-film transistors
- Author(s)
- Jeong, Jaewook ; Lee, Gwang Jun ; Kim, Joonwoo ; Kim, Jung-Hye ; Choi, Byeongdae
- Issued Date
- 2013-02
- Citation
- Semiconductor Science and Technology, v.28, no.2
- Type
- Article
- ISSN
- 0268-1242
- Abstract
- We demonstrate high operating voltage transparent thin-film transistors (HVTTFTs) using amorphous InGaZnO (a-IGZO) active layers by introducing a high resistance bulk region in the source/drain electrodes. The HVTTFTs are operated at above VDS = 100 V with a high on/off current ratio and a good subthreshold slope. The electrical characteristics of the HVTTFTs were dominantly affected by Schottky contact resistance for small off-set length, and bulk resistance for large off-set length, indicating that optimization of the off-set length is a key factor to realize high performance HVTTFTs. © 2013 IOP Publishing Ltd.
- Publisher
- Institute of Physics Publishing
- Related Researcher
-
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Choi, Byeongdae ABB연구부
- Research Interests Display
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- Appears in Collections:
- Division of Nanotechnology 1. Journal Articles
- Division of Electronics & Information System 1. Journal Articles
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