Cited 6 time in webofscience Cited 7 time in scopus

High operating voltage application of transparent a-InGaZnO thin-film transistors

Title
High operating voltage application of transparent a-InGaZnO thin-film transistors
Authors
Jeong, J[Jeong, Jaewook]Lee, GJ[Lee, Gwang Jun]Kim, J[Kim, Joonwoo]Kim, JH[Kim, Jung-Hye]Choi, B[Choi, Byeongdae]
DGIST Authors
Jeong, J[Jeong, Jaewook]; Lee, GJ[Lee, Gwang Jun]; Kim, J[Kim, Joonwoo]; Kim, JH[Kim, Jung-Hye]; Choi, B[Choi, Byeongdae]
Issue Date
2013-02
Citation
Semiconductor Science and Technology, 28(2)
Type
Article
Article Type
Article
Keywords
Active LayerAmorphous IngaznoBulk ResistanceElectrical CharacteristicHigh ResistanceKey FactorsMagnetic MaterialsON/OFF Current RatioOperating VoltageSemiconductor DevicesSource/Drain ElectrodesSub-Threshold SlopeThin-Film Transistors (TFTs)Transparent Thin Film Transistor
ISSN
0268-1242
Abstract
We demonstrate high operating voltage transparent thin-film transistors (HVTTFTs) using amorphous InGaZnO (a-IGZO) active layers by introducing a high resistance bulk region in the source/drain electrodes. The HVTTFTs are operated at above VDS = 100 V with a high on/off current ratio and a good subthreshold slope. The electrical characteristics of the HVTTFTs were dominantly affected by Schottky contact resistance for small off-set length, and bulk resistance for large off-set length, indicating that optimization of the off-set length is a key factor to realize high performance HVTTFTs. © 2013 IOP Publishing Ltd.
URI
http://hdl.handle.net/20.500.11750/3265
DOI
10.1088/0268-1242/28/2/025015
Publisher
Institute of Physics Publishing
Related Researcher
Files:
There are no files associated with this item.
Collection:
Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG)1. Journal Articles
Division of Nano∙Energy Convergence Research1. Journal Articles
Intelligent Devices and Systems Research Group1. Journal Articles


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